Taiwan Semiconductor Manufacturing Comp. Ltd.

Shyh-Chyi Wang

Chi-Feng Huang

Syun-Ming Jang Jang

Tien-I Bao

Chih-Hsien Lin

Chun-Hon Chen

Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed within the microelectronic fabrication a capacitor structure which comprises a first capacitor plate layer having formed thereupon a capacitor dielectric layer in turn having formed thereupon a second capacitor plate layer, wherein each of the foregoing layers having an exposed sidewall to thus form a series of exposed sidewalls. The capacitor structure also comprises a silicon oxide dielectric layer formed passivating the series of exposed sidewalls of the first capacitor plate layer, the capacitor dielectric layer and the second capacitor plate layer a silicon oxide dielectric layer.

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Taichung, Taiwan

Shyh-Chyi Wang