Qualcomm Incorporated

Shyamkumar Thoziyoor

Jungwon Suh

Subbarao Palacharla

Pankaj Deshmukh

Michael Hawjing Lo

Dexter Tamio Chun

Jean-Jacques Lecler

Alain Artieri

Vishakh Balakuntalam Visweswara

Ravindra Kumar

Laurent Rene Moll

Samir Vijay Ginde

Rakesh Kumar Gupta

Kedar Bhole

Christophe Avoinne

Gopi Tummala

Sparsh Singhai

Syed Minhaj Hassan

Anurag Nannaka

Carlo Spitale

Luigi Vinci

Various embodiments include methods and devices for reducing latency in pseudo channel based memory systems. Embodiments may include a first pseudo channel selection device configured to selectively communicatively connect one of a plurality of pseudo channels to a first input/output (IO), and a second pseudo channel selection device configured to selectively communicatively connect one of the plurality of pseudo channels to a second IO, in which the first pseudo channel selection device and the second pseudo channel selection device may be operable to communicatively connect a first pseudo channel of the plurality of pseudo channels to the first IO and to the second IO concurrently. Embodiments may include the pseudo channel based memory system configured to receive a memory access command targeting the first pseudo channel, and use a first pseudo channel data bus and a second pseudo channel data bus to implement the memory access command.

Reducing latency in pseudo channel based memory systems

Various embodiments include systems and methods for improving the efficiency of a memory subsystem in a computing device. The memory subsystem may be configured to detect memory access events and determining their associated timings and determine an efficiency of the memory subsystem based on operational parameters of the memory subsystem, the detecting memory access events, and associated timings. The memory subsystem may adjust the operational parameters of the memory subsystem based on the determined efficiency of the memory subsystem. The memory subsystem may dynamically modify the operations of the memory subsystem based on the adjusted operational parameters.

Self-characterizing, evaluating, and adaptive high performance memory controller

This disclosure provides systems, methods, and devices for memory systems that support operating a least portions of a memory core at a frequency lower than a memory clock to reduce power consumption and cost. In a first aspect, a memory controller includes a first core for scheduling a first memory operation for a first portion of a clock cycle of the memory clock and includes a second core for scheduling a second memory operation for a second portion of the clock cycle of the memory clock. Other aspects and features are also claimed and described.

Multiple-core memory controller

A memory system with adaptive refresh commands is disclosed. In one aspect, a memory system or device that has multiple banks within a channel may receive a per bank command that indicates a first bank to be refreshed and provides additional information about a second bank to be refreshed. In a further exemplary aspect, a quad bank refresh command may be sent that indicates a first bank to be refreshed and provides additional information about second through fourth banks to be refreshed. In a further exemplary aspect, an octa bank refresh command may be sent that indicates a first bank to be refreshed and provides additional information about second through eighth banks to be refreshed. The three new refresh commands allow adjacent or spaced banks to be refreshed.

Memory system with adaptive refresh

Various embodiments include methods for implementing flexible ranks in a memory system. Embodiments may include receiving, at a memory controller, a first memory access command and a first address at which to implement the first memory access command in a logical rank, generating, by the memory controller, a first signal configured to indicate to a first memory device of the logical rank to implement the first memory access command via a first partial channel, sending, from the memory controller, the first signal to the first memory device, generating, by the memory controller, a second signal configured to indicate to a second memory device of the logical rank that is different from the first memory device to implement the first memory access command via a second partial channel, and sending, from the memory controller, the second signal to the second memory device.

Flexible dual ranks memory system to boost performance

Methods and apparatuses for improve data clock to reduce power consumption are presented. The apparatus includes a memory configured to receive a data clock from a host via a link and to synchronize the data clock with the host. The memory includes a clock tree buffer configured to toggle based on the data clock to capture write data or to output read data and a command decoder configured to detect a data clock suspend command while the data clock is synchronized between the host and the memory. The clock tree buffer is configured to disable toggling based on the data clock in response to the command decoder detecting the data clock suspend command. the host includes a memory controller configured to provide a data clock suspend command to the memory via the link while the data clock is synchronized between the host and the memory.

Enhanced data clock operations in memory

Data caching may include storing data associated with DRAM transaction requests in data storage structures organized in a manner corresponding to the DRAM bank, bank group and rank organization. Data may be selected for transfer to the DRAM by selecting among the data storage structures.

Dram-aware caching

Memory utilization in an SDRAM system may be improved by increasing memory bank group and memory bank interleaving. Memory bank group interleaving and memory bank interleaving may be increased by a memory controller generating a physical memory address in which the bank group address bits are positioned nearer the LSB of the physical memory address than the MSB. Alternatively, or in addition to positioning the bank group address bits in such a manner, memory bank group interleaving and memory bank interleaving may be increased by hashing the bank group address bits and bank address bits of the physical memory address with row address bits of the initial physical memory address, A rank address bit may also be involved in the hashing.

Memory bank group interleaving

Dynamic random access memory (DRAM) data may be accessed by a memory controller using a broadcast mode or a non-broadcast mode. In the broadcast mode, a first portion of data that is the subject of an access request and a second portion of the data that is the subject of the access request may be accessed concurrently via first and second pseudo-channels, respectively. In the non-broadcast mode, data that is the subject of the access request may be accessed via a selected one of the first and second pseudo-channels.

Growing community of inventors

San Diego, CA, United States of America

Shyamkumar Thoziyoor