Taiwan Semiconductor Manufacturing Comp. Ltd.

Shwang-Ming Cheug

Chen-Hua Douglas Yu

Tien-I Bao

I-i Chen

A method of manufacturing a semiconductor device having a low-k dielectric layer is provided. An embodiment comprises forming a dielectric layer on a substrate, wherein the layer comprises a pore generating material dispersed in an uncured matrix. A second step comprises forming pores in the uncured matrix by irradiating the layer with radiation having a first wavelength. After pore forming, a third step comprises cross-linking the dielectric by irradiating it at a second wavelength, the second being less than the first. In an embodiment, the irradiating wavelengths comprise ultra-violet radiation. Embodiments may further include repairing processing damage wherein the damage includes dangling bonds or silanol formation. The repairing includes annealing in a carbon-containing ambient such as CH, CH, or hexamethyldisilazane (HMDS).

Growing community of inventors

Hsin-Chu, Taiwan

Shwang-Ming Cheug