Sony Corporation

Sony Semiconductor Solutions Corporation

Shuzo Sato

Takeshi Nogami

Yuji Segawa

Akira Yoshio

Hiizu Ohtorii

Naoki Komai

Masao Ishihara

Zenya Yasuda

Minoru Ishida

Nobutoshi Fujii

Masanori Iwasaki

Hiizu Ootorii

Toshihiko Hayashi

Hiroshi Tazawa

Suguru Saito

Hiroyasu Matsugai

Hiroyuki Itou

Toshiaki Shiraiwa

Keiji Ohshima

Eiji Otani

Takatoshi Saito

Yoshiaki Komuro

Hideaki Hayakawa

Yutaka Ozawa

Yasuharu Ohkawa

Taiichi Kusano

Seiji Kobayashi

Hiroshi Horikoshi

Ken Ozawa

Kaori Tai

Kazuhiro Yamada

Kazuyuki Yamamoto

Mitsuru Sato

Takashi Suzuki

Kimihiro Saito

Takayuki Yoshigahara

Jun Murayama

Takeo Ohishi

Takeshi Kubo

Katsumi Watanabe

Masatoshi Suzuki

Yusuke Moriya

Munekatsu Fukuyama

Hidehiro Kume

Shingo Takahashi

Yoshihiro Miyazawa

Hiroshi Kosugi

Nobuo Suematsu

Takaaki Kozuki

Ken Nishida

Akira Yoshiq

Takuo Ihira

Hiizu Otorii

There is provided a camera module including a stacked lens structure including a plurality of lens substrates. The plurality of lens substrates includes a first lens substrate including a first lens that is disposed at an inner side of a through-hole formed in the first lens substrate, and a second lens substrate including a second lens that is disposed at an inner side of a through-hole formed in the second lens substrate, wherein the first lens substrate is directly bonded to the second lens substrate. The camera module further includes an electromagnetic drive unit configured to adjust a distance between the stacked lens structure and a light-receiving element.

AF module, camera module, and electronic apparatus

A deformation of a stacked lens is suppressed. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

Stacked lens structure, method of manufacturing the same, and electronic apparatus

An image processing device includes depth acquisition circuitry that uses a parallax corresponding to image data to electronically generate a depth map of an image and object detection circuitry that uses distance information and the depth map to electronically detect a specific object in the image by identifying specific pixels in the image data. The depth map includes information that pertains to distances from a reference position for each pixel in the image.

Image processing device, imaging device, image processing method and program

Stacked lens structure method of manufacturing the same, and electronic apparatus

According to an illustrative embodiment an imaging system is provided. The system includes a lens tube; a first polarizing filter; and a second polarizing filter; wherein the first polarizing filter and the second polarizing filter are adjacent each other, and wherein a polarizing imparted by the first polarizing filter is different from a polarizing imparted by the second polarizing filter.

Imaging apparatus

A stereoscopic imaging method where a pixel matrix is divided into groups such that parallax information is received by one pixel group and original information is received by another pixel group. The parallax information may, specifically, be based on polarized information received by subgroups of the one pixel, group and by processing all of the information received multiple images are rendered by the method.

Stereoscopic imaging method and system that divides a pixel matrix into subgroups

This invention relates to capturing an image of a subject as a three-dimensional image using a single image-capturing apparatus. The image-capturing apparatus includes a first polarization means, a lens system, and an image-capturing device array having a second polarization means. The first polarization means includes first and second regions arranged along a first direction, and the second polarization means includes multiple third and fourth regions arranged alternately along a second direction. First region transmission light having passed the first region passes the third region and reaches the image-capturing device, and second region transmission light having passed the second region passes the fourth region and reaches the image-capturing device. Thus, an image is captured to obtain a three-dimensional image in which a distance between a barycenter BCof the first region and a barycenter BCof the second region is a base line length of parallax between two eyes.

Image-capturing apparatus and image-capturing method

A polishing method for electropolishing a metal film formed on a wafer surface so as to fill concave portions formed on the wafer surface comprises a step of determining an electropolishing end point of the metal film on the basis of a change of a current waveform resulting from electropolishing the metal film. An electropolishing apparatus comprising a current detector for detecting a current waveform resulting from electropolishing a metal film and an end point determination part for determining an electropolishing end point of the metal film on the basis of the change of a current detected with the current detector is used to realize the polishing method.

Polishing method and electropolishing apparatus

A method for producing a semiconductor device, polishing method, and polishing apparatus, suppressing occurrence of dishing and erosion in a flattening process by polishing of a metal film for constituting an interconnection of a semiconductor device having a multilayer interconnection structure. The production method includes the steps of: forming a passivation film exhibiting an action of inhibiting an electrolytic reaction of a metal at the surface of the metal film; selectively removing the passivation film on a projecting portion so as to expose the projecting portion of the metal film at the surface; removing the exposed projecting portion of the metal film by electrolytic polishing so as to flatten unevenness of the surface of the metal film; and removing the metal film present on an insulation film from the metal film with the flattened surface by electrolytic composite polishing combining electrolytic polishing and mechanical polishing so as to form an interconnection.

Method for producing semiconductor device, polishing apparatus, and polishing method

A method of production and a method of polishing a semiconductor device and a polishing apparatus, capable of easily flattening an initial unevenness of a metal film, excellent in efficiency of removal of an excess metal film, and capable of suppressing damage to an interlayer insulation film below the metal film when flattening the metal film by polishing, the polishing method including the steps of interposing an electrolytic solution including a chelating agent between a cathode member and the copper film, applying a voltage between the cathode member used as a cathode and the copper film used as an anode to oxidize the surface of the copper film and forming a chelate film of the oxidized copper, selectively removing a projecting portion of the chelate film corresponding to the shape of the copper film to expose the projecting portion of the copper film at its surface, and repeating the above chelate film forming step and the above chelate film removing step until the projecting portion of the copper film is flattened.

Methods of producing and polishing semiconductor device and polishing apparatus

A polishing method and a polishing apparatus by which excess portions of a metallic filmcan be removed easily and efficiently in planarizing the metallic filmby polishing and which is high in accuracy of polishing, are provided. Also, a method of manufacturing a semiconductor device by use of the polishing method and the polishing apparatus is provided. A substrateprovided with the metallic filmand a counter electrodeare disposed oppositely to each other in an electrolytic solution E, an electric current is passed to the metallic filmthrough the electrolytic solution E, and the surface of the metallic filmis polished with a hard pad

Polishing method, polishing apparatus, and method of manufacturing semiconductor device

An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.

Etching solution, etching method and method for manufacturing semiconductor device

Concentration of electric current due to an additive (particularly, a brightener) remaining or precipitated in a high concentration at grain boundary triple points and wiring groove portions in the surface layer of a copper plating film is obviated, whereby precedent dissolution and/or abnormal dissolution due to concentration of electric current is restrained, and an electropolished surface of the copper plating film with excellent surface smoothness is obtained. A method of producing a metallic film includes the steps of: forming a metallic plating film (copper plating film ()) by use of a plating solution prepared by adding a plating additive for restraining void generation, bottom-up fill and overfill; and electropolishing the metallic plating film by use of an electropolishing solution prepared by adding a polishing additive capable of reacting or coupling with the plating additive component contained or precipitated in the surface layer of the metallic plating film.

Method of producing metallic film

Growing community of inventors

Kanagawa, Japan

Shuzo Sato