Asm Japan K.k.

Shuzo Hebiguchi

Naoto Tsuji

Ryu Nakano

Yozo Ikedo

A method of forming low-dielectric-constant silicon oxide films by capacitive-coupled plasma CVD comprises: introducing a processing gas comprising SiHas a silicon source gas, SiFas a fluorine source gas, and COas an oxidizing gas to a reaction chamber at a ratio of (SiH+SiF)/COin the range of 0.02 to 0.2 and at a total pressure of 250 Pa to 350 Pa; applying first RF power at a frequency of 10 MHz to 30 MHz and second RF power at a frequency of 400 kHz to 500 kHz by overlaying the two RF powers to generate a plasma reaction field within the reaction chamber; and controlling a flow of the respective gases and the respective RF power outputs.

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Tama, Japan

Shuzo Hebiguchi