National University of Singapore

Shuyuan Shi

Hyunsoo Yang

Yi Wang

Yang Liu

Kaiming Cai

Rajagopalan Ramaswamy

Described is a spin torque device, and a spintronics device Incorporating the spin torque device. The spin torque device comprises a magnetic layer having a switchable magnetisation direction along a first axis, and a spin source layer adapted to generate a spin current from a current Injected along a second axis perpendicular to the first axis. Electrons of different spins in the spin source layer are rearranged by scattering so the spin current is generated in a plane perpendicular to the second axis and polarized at an angle to the first axis, so that the spin current diffuses into the magnetic layer to produce spin torque to switch the magnetisation direction.

Spin torque device having a spin current polarized at a canting angle of out-of-plane spin

In one embodiment, a SOT device is provided that replaces a traditional NM layer adjacent to a magnetic layer with a NM layer that is compatible with CMOS technology. The NM layer may include a CMOS-compatible composite (e.g., CuPt) alloy, a TI (e.g., BiSe, BiSe, BiSb, etc.) or a TI/non-magnetic metal (e.g., BiSe/Ag, BiSe/Ag, BiSb/Ag, etc.) interface, that provides efficient spin current generation. Spin current may be generated in various manners, including extrinsic SHE, TSS or Rashba effect.

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Singapore, Singapore

Shuyuan Shi