Massachusetts Institute of Technology

Nanyang Technological University

Shuyu Bao

Chuan Seng Tan

Kwang Hong Lee

Eugene A Fitzgerald

Jurgen Michel

Wei Li

Yiding Lin

Yew Heng Tan

Gang Yih Chong

P Anantha

Lin Zhang

Various embodiments may provide an optical structure. The optical structure may include a substrate. The optical structure may also include a core layer configured to carry optical light. The core layer may include germanium. The optical structure may further include an intermediate layer separating the substrate and the core layer so that the substrate is isolated from the core layer. The intermediate layer may include one or more materials selected from a group consisting of III-V materials, dielectric materials, and chalcogenide materials. A width of the core layer may be smaller than a width of the intermediate layer. A refractive index of the core layer may be more than 4. A refractive index of the intermediate layer may be smaller than 3.6.

Optical structure and method of forming the same

A method of manufacturing a substrate with reduced threading dislocation density is disclosed, which comprises: (i) at a first temperature, forming a first layer of wafer material on a semiconductor substrate, the first layer arranged to be doped with a first concentration of at least one dopant that is different to the wafer material; and (ii) at a second temperature higher than the first temperature, forming a second layer of the wafer material on the first layer to obtain the substrate, the second layer arranged to be doped with a progressively decreasing concentration of the dopant during formation, the doping configured to be decreased from the first concentration to a second concentration. The wafer material and dopant are different to silicon. A related substrate is also disclosed.

Method of manufacturing a substrate with reduced threading dislocation density

A method of manufacturing a germanium-on-insulator substrate is disclosed, comprising: (i) doping a first portion of a germanium layer with a first dopant to form a first electrode, the germanium layer arranged with a first semiconductor substrate; (ii) forming at least one layer of dielectric material adjacent to the first electrode to obtain a combined substrate; (iii) bonding a second semiconductor substrate to the layer of dielectric material and removing the first semiconductor substrate from the combined substrate to expose a second portion of the germanium layer with misfit dislocations; (iv) removing the second portion of the germanium layer to enable removal of the misfit dislocations and to expose a third portion of the germanium layer; and (v) doping the third portion of the germanium layer with a second dopant to form a second electrode. The electrodes are separated from each other by the germanium layer, and the first dopant is different to the second dopant.

Method of manufacturing a germanium-on-insulator substrate

A method of manufacturing a germanium-on-insulator substrate is disclosed. The method comprises: providing () a first semiconductor substrate, and a second semiconductor substrate formed with a germanium layer; bonding () the first semiconductor substrate to the second semiconductor substrate using at least one dielectric material to form a combined substrate, the germanium layer being arranged intermediate the first and second semiconductor substrates; removing () the second semiconductor substrate from the combined substrate to expose at least a portion of the germanium layer with misfit dislocations; and annealing () the combined substrate to enable removal of the misfit dislocations from the portion of the germanium layer.

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Singapore, Singapore

Shuyu Bao