Electronics and Telecommunications Research Institute

Shuvra Mondal

Seong Jun Kim

Choon Gi Choi

Bok Ki Min

Yoonsik Yi

Tam Van Nguyen

Choon-Gi Choi

Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.

Anti-radiation structure, temperature-pressure complex sensor including the same and having anti-radiation property, and manufacturing method thereof

Provided is a pressure-strain sensor including a graphene structure having a three-dimensional porous structure, planar sheets provided on a surface of the graphene structure, and a polymer layer configured to cover the graphene structure and the planar sheets, wherein each of the planar sheets contains a transition metal chalcogenide compound.

Pressure-strain sensor including a graphene structure

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Seoul, South Korea

Shuvra Mondal