Toshiba Ceramics Co., Ltd.

Shuuitsu Matsuo

Hidenori Yamaoka

Hiroaki Kotaka

Nobuhisa Kurono

Yoshirou Aiba

Quartz material is subjected to a heat contact treatment with ammonia gas at 1200.degree. C. less under the presence of a carbon generating source to form a silicon oxynitride layer on the surface of the quartz material easily and rapidly. The obtained surface-treated quartz material has excellent heat resistance, and no exfoliation of the silicon oxynitride layer from the quartz material occurs even when it is subjected to a repetitive heat cycle. Further, if a second surface treatment step of coating a silicon nitride film on the silicon oxynitride layer using a CVD method or the like is performed after the surface treatment step of forming the silicon oxynitride layer on the surface of the quartz material, the heat resistance is more improved.

Growing community of inventors

Atsugi, Japan

Shuuitsu Matsuo