Pioneer Corporation

Pioneer Electronic Corporation

Shuuichi Yanagisawa

Kazuo Kuroda

Takashi Yamada

Takashi Chuman

Atsushi Yoshizawa

Kazuto Sakemura

Takamasa Yoshikawa

Nobuyasu Negishi

Kiyohide Ogasawara

Shingo Iwasaki

Hiroshi Ito

Satoshi Sugiura

Satoru Tanaka

Yoshihisa Kubota

Akihiro Tachibana

Yoshihisa Itoh

Taishi Tsuji

Hideo Satoh

Takako Miyake

Takuya Hata

Yoshihiko Uchida

A hologram recording apparatus () includes a record angle change device () capable of relatively changing the record angle of a hologram recording medium () relative to signal light (L) and reference light (L); and a control device (). The control device sets a record angle for recording a specific angle record plane as a standard record angle among a plurality of angle record planes on the hologram recording medium. Furthermore, the control device controls the record angle change device so as to change and fix the record angle after then by a predetermined angle from the set standard record angle.

Angle-multiplexing hologram recording device, method, hologram reproduction device, and method

A hologram record apparatus () includes a parameter set device (), a move device (), and a control device (). The parameter set device () modifies parameters for multiple recordings such as a record angle and a focal depth in relation to at least one of signal light (L) and reference light (L) and can fix the parameters. The move device () relatively moves the focus position of the signal light and the reference light in the direction along the record surface of a hologram record medium. The control device () performs control so that the parameter for the last recording used for recording at the m-th focus position is used as the parameter for the first recording at the m+1-th focus position.

Multiplex recording type hologram recording device, method, hologram reproduction device, and method

An example memory includes an address control portion, a protection film, a property deterioration material layer, data storage areas, and bonding pads. The protection film protects an organic semiconductor layer of a semiconductor circuit and prevents intrusion of moisture or chemical molecules in the air, light, or the like, into the organic semiconductor layer. Deterioration of the organic semiconductor layer is started by breaking the protection film and using a specified means, thus starting operation of the lifetime period. The property deterioration material layer contains a material for deteriorating the property of the organic semiconductor and deterioration of the organic semiconductor layer is started, for example, by diffusing the material into the organic semiconductor layer.

Semiconductor memory element and lifetime operation starting apparatus therefor

Semiconductor memory element and its lifetime operation starting device

A hologram record apparatus () includes a spatial light modulator () and a control device (). The spatial light modulator () is arranged on an optical path of signal light (L) and divided into a plurality of cell blocks () arranged in a matrix. Each of the cell blocks () is further divided into a plurality of cells () arranged in a matrix. The spatial light modulator () can perform modulation on the cell basis. The control device () controls the spatial light modulator so as to modulate the signal light according to a plurality of record information sets to be recorded on a hologram record medium (). Pluralities of modulation units () existing in the same cell block are not made into identical patterns. Since a plurality of cell blocks having a large pitch as compared to the pixel pitch are simultaneously or successively turned on/off, it is possible to reduce the distance between the zeroth-order light and the higher-order light.

Hologram recording device and hologram reproduction device

An image display device includes at least one transmissive display panel arranged at different depth positions in a direction normal to a display surface of the image display device. Each of the transmissive display panels includes a light-emitting layer that is sandwiched between a front side transmissive film and a rear side transmissive film. The rear side transmissive film has an interface with a maximum refractive index difference that causes an efficiency of light emitted from the light-emitting layer to become smaller than a front side light emission efficiency in the characteristics of light-emission efficiency, which changes with respect to a film thickness of the transmissive film due to optical interference.

Image display device and manufacuring method

A 3D display apparatus () is provided with: a plurality of displaying devices () which are arranged on a visual line of a viewer () in series at a predetermined interval; and a controlling device () for controlling the displaying devices to respectively display images, so as to show a three dimensional image for the viewer. At least one () of the displaying devices except for a displaying device () which is positioned farthest from the viewer has an image displaying surface having both of a self-emitting property and a light transparency property.

Three-dimensional display apparatus and method

A recording medium such as a semiconductor recording medium is provided with: a data area in which data is recorded; and a management information area in which management information of the data recorded in the data area is recorded. The recording medium is further provided with an effective duration area in which an effective duration of the data recorded in the data area is recorded.

Recording medium, and recording apparatus, reproducing apparatus, recording method and control method thereof

An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer has a rectifier function layer, whereby the electron emission device emits electrons when an electric field is applied between the electron-supply layer and the thin-film metal.

Electron emission device and display apparatus using the same

An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of a silicon wafer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Electron emission device and display device using the same

An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a silicide layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a film thickness of 2.5 &mgr;m or greater. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

There is provided a lithium polymer secondary cell in which reduction of the film thickness of a solid electrolyte can be realized. The lithium ion secondary cell consists essentially of a composite electrode as a positive electrode having a positive electrode layer, containing a mercaptide compound and a conductive material, carried on a collector; the hydrogen atom of at least one mercapto group in the mercaptide compound being substituted with a lithium atom; a polyelectrolyte; and a lithium negative electrode.

Lithium secondary cell

An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of hydrogenated amorphous silicon. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Electron emission device with electron supply layer of hydrogenated amorphous silicon

The present invention is directed to a secondary cell having a positive electrode composed of polyaniline, wherein the positive electrode is formed by deriving an organic solution of polyaniline mixed with a diazo compound on a specific positive electrode collector. The invention also relates to a lithium ion secondary cell having a positive electrode composed of polyaniline and a diazo compound and a negative electrode composed of graphite, wherein the solvent of the electrolyte is a mixed solvent of ethylene carbonate, .gamma.-butyrolactone and 1,2-dimethoxyethane.

Growing community of inventors

Tsurugashima, Japan

Shuuichi Yanagisawa