Sony Semiconductor Solutions Corporation

Hitachi Global Storage Technologies Netherlands B.v.

Hgst Netherlands, B.v.

Shuuichi Kojima

Satoru Okamoto

Katsuro Watanabe

Nobuo Yoshida

Yoshiyuki Akiyama

Takashi Miyamoto

Junichi Tsunoda

Hiroyuki Katada

Koji Okazaki

Akira Arahata

The present technology relates to a circuit board, a semiconductor device, and an electronic apparatus that reduce the generation of noise signals. A circuit board includes: a first conductor layer that has a first conductor portion including a conductor having a planar or mesh-like first basic pattern repeatedly disposed in the same plane; and a second conductor layer that has a second conductor portion including a conductor having a planar or mesh-like second basic pattern repeatedly disposed in the same plane, and a third conductor portion including a conductor having a planar, linear, or mesh-shaped third basic pattern repeatedly disposed in the same plane. The repeating cycles of the first and second basic patterns are substantially the same cycles, and the third basic pattern is different than the second basic pattern. The present technology can be applied to a circuit board of a semiconductor device and the like, for example.

Circuit board, semiconductor device, and electronic apparatus

The present technology relates to a semiconductor device and an electronic apparatus that make it possible to suppress the generation of noise in signals. A semiconductor device includes: a first semiconductor substrate on which at least a portion of a first conductor loop is formed; and a second semiconductor substrate on which a second conductor loop is formed. The second semiconductor substrate includes a first conductor layer and a second conductor layer. The first conductor layer and the second conductor layer each include a conductor. The first conductor layer and the second conductor layer are configured to cause a direction of a loop surface in which a magnetic flux is generated from the second conductor loop to be different from a direction of a loop surface in which an induced electromotive force is generated in the first conductor loop. The present technology is applicable, for example, to a CMOS image sensor.

Semiconductor device and electronic apparatus

Embodiments of the present invention help to reduce etching damage at end parts of a magnetoresistive sensor in ion beam etching. According to one embodiment, ion beam etching (IBE) is used in a magnetoresistive sensor track width forming step. This IBE irradiates Ar ion beam to a substrate in a state that the substrate is inclined and further rotates the substrate about its normal as a rotational axis. In a conventional track width forming step, the IBE irradiates the Ar ion beam to the substrate all the time while the IBE is rotating the substrate. By contrast, the IBE according to embodiments of the present invention irradiates the Ar ion beam to the substrate only in a predetermined specific angular range.

Magnetic detection element

Embodiments of the present invention help to prevent a head characteristic from being deteriorated by re-deposition or damage which occurs when a sensor film is etched, a track width is narrowed, and the head characteristic is stabilized. According to one embodiment, when it is assumed that the thickness of the sensor film on an air bearing surface is T, and a distance between an end of a medium layer that is interposed between a free layer and a pinned layer which comprise the sensor film and an end of the sensor film lowest portion, a relationship of 1.2&#xd7;T&#x2266;X&#x2266;2.5&#xd7;T is satisfied, and the ends of a pair of magnetic films which are in contact with both sides in the track-width direction through an insulator do not exist in the track central portion from the free layer end. The sensor film is etched while an incident angle of an etching beam is changed over, and when it is assumed that a direction normal to the sensor film surface is the incident angle of 0, etching is conducted under the condition where the incident angle of the etching beam becomes smaller with time.

Sensor shape of a CPP magnetic head for improving the MR ratio

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Kanagawa, Japan

Shuuichi Kojima