Xiamen San'an Optoelectronics Co., Ltd

Shutian Qiu

Chung-Ying Chang

Yu-Tsai Teng

Yan Feng

Shuo Yang

Qihua Liao

Chia-Hao Chang

Ji-Pu Wu

Hongbin Tang

A composite reflective structure includes at least one dielectric multilayer element which includes a first dielectric layer having a first refractive index, a second dielectric layer having a second refractive index, and a stress buffer layer interposed therebetween. The first refractive index is greater than the second refractive index. Also disclosed herein is a light-emitting diode chip including the abovementioned composite reflective structure and a light-emitting diode device including the light-emitting diode chip.

Composite reflective structure and light-emitting diode chip and light-emitting diode device including the same

A light emitting chip includes a first-type semiconductor layer, a light emitting layer, and a second-type semiconductor layer which are disposed in such order, a passivation layer, and a current spreading layer. The second-type semiconductor layer and the light emitting layer cooperate to form a mesa structure which partially exposes the first-type semiconductor layer. The mesa structure has a lateral surface over which the passivation layer is disposed. The current spreading layer is disposed in contact with the second-type semiconductor layer. A distance between peripheries of a contact surface of the current spreading layer and a top surface of the second-type semiconductor layer is not greater than 5 &#x3bc;m. A method for producing the chip is also disclosed.

Light emitting chip and method of producing the same

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Fujian, China

Shutian Qiu