Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Shutaro Nambu

Osamu Ishikawa

Akio Shimano

Masahiro Hagio

Hiroshi Tsukada

Shinichi Katsu

Chinatsu Azuma

Kazuhide Goda

Shin Katsu

Yasuhisa Yamashita

Kazuhide Gohda

A high frequency semiconductor device comprising metal electrode leads formed on one surface of a flexible film, a plurality of bumps formed on selected portions of the electrode patterns, a recessed portion formed on the flexible film within a region bounded by the plurality of bumps and a plurality of electrode pads of a high frequency semiconductor element respectively bonded to the bumps in alignment with each other.

High frequency semiconductor device

The amplifier employs an FET having a flat characteristic of mutual conductance versus the potential gap between the gate and the source of the FET. By employing this FET, the amplifier achieves a sufficiently flat gain characteristic in which the gain deviation is very small throughout the range of the objective frequencies.

Wideband amplifier using FET

An FET circuit suitable for a latch has a pair of inverters. The input stage FET of each of the inverters is connected such that the gate electrode thereof is connected to receive an output signal of the FET of the other inverter through a circuit having an FET and at least a diode. The sources of the input stage FETs are connected to a common connection point, and a current source arrangement such as a resistor is connected between the common connection point and a power supply terminal. The circuit provides an extended allowable range of the effective threshold voltage V.sub.T and has small power consumption.

Mesfet latch circuit

In an FET, two first semiconductor regions of higher impurity concentration and smaller thickness, for source electrode and drain electrode, are formed in a second semiconductor region of lower impurity concentration and larger thickness for a gate electrode, thereby obtaining a low source resistance and small leak current.

Method of making GaAs MOSFET with low source resistance yet having

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