Rohm Co., Ltd.

Shuta Kojima

Toshio Nakajima

Yuto Osawa

Disclosed is a semiconductor device including a semiconductor layer having a main surface, a first conductivity type drift region formed at a surface layer part of the main surface, a super junction region having a first conductivity type first column region and a second conductivity type second column region, a second conductivity type low resistance region formed at the surface layer part of the drift region and having an impurity concentration in excess of that of the second column region, a region insulating layer formed on the main surface and covering the low resistance region such as to cause part of the low resistance region to be exposed, a first pad electrode formed on the region insulating layer such as to overlap with the low resistance region, and a second pad electrode formed on the main surface and electrically connected to the second column region and the low resistance region.

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Kyoto, Japan

Shuta Kojima