Taiyo Yuden Co., Ltd.

Shusaku Ueda

Jun Nishikawa

Noriyuki Chigira

Shinichi Abe

A multilayer ceramic capacitor includes: a multilayer structure in which each of a plurality of ceramic dielectric layers and each of a plurality of internal electrode layers are alternately stacked wherein: a concentration of a rare earth element of at least one of an end margin region and a side margin region is lower than that of a capacity region; a total concentration of Si and B of the at least one of the end margin region and the side margin region is higher than that of the capacity region.

Multilayer ceramic capacitor and manufacturing method thereof

A multilayer ceramic capacitor includes: a multilayer structure in which dielectric layers and internal electrode layers are alternately stacked, the plurality of internal electrode layers being alternately exposed to a first edge face and a second edge face; and side margin regions that cover edge portions to which the plurality of internal electrode layers extend toward two side faces and have a structure in which a first ceramic layer and a second ceramic layer are alternately stacked in a stacking direction of the internal electrode layer and the dielectric layer, an amount of a second-phase of the first ceramic layer being larger than that of the second ceramic layer, a main component of the second-phase being SiOor a combination of SiOand BO, wherein a content ratio of the second-phase of the first ceramic layer is 15% or more and 45% or less.

Multilayer ceramic capacitor and manufacturing method of the same

A multilayer ceramic capacitor has multiple laminated dielectric ceramic layers made of a dielectric ceramic, internal electrodes formed between the dielectric ceramic layers, and external electrodes electrically connected to the internal electrodes, wherein generation of cracks in the dielectric layer due to expansion of the internal electrode is suppressed by causing ceramic grains having a crystal axis ratio c/a higher than that of the ceramic grains constituting the dielectric layer to be present in non-contiguous parts of the internal electrodes between the dielectric ceramic layers, and by harnessing the stress-mitigating effect of domain switching involving these ceramic grains.

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Takasaki, Japan

Shusaku Ueda