Nec Lcd Technologies, Ltd.

Nec Corporation

Gold Charm Limited

Shusaku Kido

Hiroaki Tanaka

Takasuke Hayase

Toshihiko Harano

Hiroyuki Uchida

Shigeru Kimura

Takahiko Watanabe

Kazushige Takechi

Tsutomu Hamada

Akitoshi Maeda

Shinichi Nakata

Hirofumi Ihara

Satoshi Ihida

Satoshi Doi

Shouichi Kuroha

Tae Yoshikawa

Hisanobu Shimodouzono

A method for processing a substrate, the substrate comprising an organic film pattern, the method comprising: a fusion/deformation step of fusing said organic film pattern to deform the fused organic film pattern and a third removal step of removing at least a part of the fused and deformed organic film pattern.

Method for processing substrate and method for fabricating apparatus

A method of processing a substrate through the use of an apparatus, including a substrate carrier for carrying a substrate; a liquid-applying unit for applying chemical to said substrate; and a gas-applying unit for applying gas atmosphere generated by vaporizing the liquid to said substrate. And the apparatus includes a plurality of process units, and the same process is applied to the substrate in each said process units.

Apparatus for processing substrate and method of doing the same

A method of processing a substrate through the use of an apparatus, including a substrate carrier for carrying a substrate; a liquid-applying unit for applying chemical to said substrate; and a gas-applying unit for applying gas atmosphere to said substrate, wherein the method includes processing an organic film pattern formed on a substrate, by, in sequence, removing one of an altered layer and a deposited layer formed on the organic film pattern, and fusing said organic film pattern for deformation by applying gas atmosphere to the organic film pattern in the gas-applying unit, wherein at least a part of the removal step is carried out by applying a liquid to the organic film pattern in the liquid-applying unit. The process may include an ashing unit for ashing the substrate and/or a development unit for developing the organic film pattern.

A method for forming an organic mask, includes:

Method for forming organic mask and method for forming pattern using said organic mask

A method of deforming a pattern comprising the steps of: forming, over a substrate, a layered-structure with an upper surface including at least one selected region and at least a re-flow stopper groove, wherein the re-flow stopper groove extends outside the selected region and separate from the selected region; selectively forming at least one pattern on the selected region; and causing a re-flow of the pattern, wherein a part of an outwardly re-flowed pattern is flowed into the re-flow stopper groove, and then an outward re-flow of the pattern is restricted by the re-flow stopper groove extending outside of the pattern, thereby to form a deformed pattern with at least an outside edge part defined by an outside edge of the re-flow stopper groove.

Semiconductor device having a gap between a gate electrode and a dummy gate electrode

A method for forming a structure formed by etching which is typified by a contact hole in the semiconductor and a method for manufacturing a display device using the structure. The etching method includes at least, forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched, and forming a transformed organic mask by dissolving the organic mask in contact with organic solvent and reflowing.

Method for etching and for forming a contact hole using thereof

A process for forming a pattern contains steps of: forming a first mask pattern on a film to be etched on a substrate; forming a first pattern of the film to be etched by using the first mask pattern as a mask; forming a second mask pattern having a plane shape different from that of the first mask pattern by deforming the first mask pattern; and forming a second pattern of the film to be etched different from the first pattern by using the second mask pattern. By applying the process for forming a pattern, for example, to the formation of a semiconductor layer and source and drain electrodes of a TFT substrate of a liquid crystal display apparatus, the above-stated formation requiring two photoresist process steps in a conventional manufacturing method of a liquid crystal display apparatus can be carried out by only one process step, thereby reducing manufacturing cost thereof.

Process for forming pattern and method for producing liquid crystal display apparatus

A photo-resist mask of organic compound is stripped off after the pattern transfer to a layer thereunder, wherein the photo-resist mask is firstly exposed to vapor of organic solvent for reducing the thickness through a reflow, and, thereafter, the photo-resist mask is ashed in an oxygen plasma, whereby the dry ashing is completed within a short time period by virtue of the reduction of thickness.

Method for removing patterned layer from lower layer through reflow

Method of deforming a pattern and semiconductor device formed by utilizing deformed pattern

An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and namorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the namorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

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Kagoshima, Japan

Shusaku Kido