Xiamen San'an Optoelectronics Co., Ltd

Quanzhou Sanan Semiconductor Technology Co., Ltd.

Shuo Yang

Chung-Ying Chang

Su-Hui Lin

Chia-En Lee

Yan Feng

Shiwei Liu

Yu-Tsai Teng

Quanyang Ma

Hongwei Xia

Zheng Wu

Shutian Qiu

Jiali Zhuo

Huining Wang

A light-emitting device includes an epitaxial structure that includes a first semiconductor layer, an active layer and a second semiconductor layer. The light-emitting device further has a transparent current spreading unit, a first electrode and a second electrode. The transparent current spreading unit includes a first transparent current spreading layer and a second transparent current spreading layer. The first transparent current spreading layer is doped with aluminum and has a thickness that accounts for 0.5% to 33% of a thickness of the transparent current spreading unit. The second transparent current spreading layer has a thickness greater than that of the first transparent current spreading layer. A light-emitting apparatus includes a circuit control component, and a light source that is coupled to the circuit control component and that includes the aforesaid light-emitting device.

Light-emitting device

A micro light-emitting diode includes a semiconductor stacked structure. The semiconductor stacked structure includes a first surface, a second surface opposite to the first surface, and a lateral surface connecting the first surface and the second surface. The first surface has a roughened portion, and the lateral surface is smooth. A micro light-emitting device including the micro light-emitting diode, and a display device including the micro light-emitting diode are also disclosed.

Micro light-emitting diode and micro light-emitting device with rough surface and protection layer

A light emitting chip includes a first-type semiconductor layer, a light emitting layer, and a second-type semiconductor layer which are disposed in such order, a passivation layer, and a current spreading layer. The second-type semiconductor layer and the light emitting layer cooperate to form a mesa structure which partially exposes the first-type semiconductor layer. The mesa structure has a lateral surface over which the passivation layer is disposed. The current spreading layer is disposed in contact with the second-type semiconductor layer. A distance between peripheries of a contact surface of the current spreading layer and a top surface of the second-type semiconductor layer is not greater than 5 &#x3bc;m. A method for producing the chip is also disclosed.

Light emitting chip and method of producing the same

Growing community of inventors

Fujian, China

Shuo Yang