Chimei Innolux Corporation

Innolux Display Corporation

Innolux Corporation

Chimel Innolux Corporation

Shuo-Ting Yan

Tsau-Hua Hsieh

Chao-Yi Hung

Jen-Chieh Peng

Sung-Yen Chen

Kuan-Yi Yang

Yu-Cheng Chang

Yu-Lin Hsieh

An exemplary thin film transistor array substrate () includes a substrate () and a gate electrode () formed on the substrate. The gate electrode includes an adhesive layer () formed on the substrate, a conductive layer () formed on the adhesive layer and a barrier layer () formed on the conductive layer, the adhesive layer and the barrier layer both have sandwich structures. A central core of the adhesive layer, the conductive layer, and a central core of the barrier layer are made of a same material.

Thin film transistor array substrate having sandwich structure gate electrode and manufacturing method thereof

A thin film transistor (TFT) substrate includes gate lines, data lines intersecting with the gate lines, a plurality of TFTs, pixel electrodes, and a common electrode insulating the gate lines, the data lines, the TFTs, and the pixel electrode. Each pixel electrode is connected to one of the gate lines and one of the data lines via one of the TFTs. A layer stack including an insulating layer and a passivation layer is sandwiched between the pixel electrodes and the common electrode.

Thin film transistor substrate and method for manufacturing same

An exemplary liquid crystal panel includes a first substrate, a second substrate opposite to the first substrate, a light sensor disposed at an inner side of the first substrate, and a black matrix disposed at an inner side of the second substrate. The light sensor includes a light-sensing unit, and the black matrix includes a semi-transparent film corresponding to the light-sensing unit. A liquid crystal display device employing the liquid crystal panel is also provided.

Liquid crystal panel with light sensor and liquid crystal display device using the same

An exemplary frame assembly () includes a first frame (), a second frame (), a third frame () accommodating at least part of the first frame and at least part of the second frame. The first, second and third frames cooperatively define an accommodating space of the frame assembly, and the positions of the first frame and the second frame relative to each other are adjustable such that the accommodating space has a desired size.

Adjustable frame assembly for flat panel display

An exemplary display device () includes a display body () and a support body () configured for supporting and moving the display body. The support body includes at least one trolley wheel assembly () capable of moving horizontally, and at least one stopper () corresponding to the trolley wheel assembly, which is capable of braking the trolley wheel assembly. The display body is moved horizontally when the trolley wheel assembly is moved horizontally.

Display device with moving controller, the controller capable of moving horizontally

An exemplary electrostatic discharge protection device includes: an electrostatic discharge part configured for discharging electrostatic when the electrostatic is larger than a threshold value; and a light emitting part configured for emitting light when electrostatic discharge happens.

Electrostatic discharge protection device with phosphors and method of fabricating the same

An exemplary method for fabricating a damascene interconnect structure includes the following. First, providing a substrate. Second, depositing a multilayer dielectric film on the substrate. Third, forming a patterned photoresist on the multilayer dielectric film. Fourth, etching the multilayer dielectric film to form a plurality of trenches, a portion of each of the trenches having an enlarged width at each of sidewalls thereof. Fifth, filling the trenches with conductive metal to form conductive lines such that air is trapped in extremities of the enlarged width portions of the trenches.

Method for fabricating damascene interconnect structure having air gaps between metal lines

A circuitry testing method, comprising: providing a circuit board needing testing; applying a potential () to the circuit board needing testing so that the circuit board works and operating elements of the circuit board needing testing emit infrared rays; testing an intensity of radiation of the infrared rays using an infrared sensor (); converting the radiation intensity to RGB (red, green, blue) data signals in order to form a diagnostic infrared image, using a processor (); providing a standard infrared image; comparing the diagnostic infrared image with the standard infrared image; and determining whether the circuit board is defective according to the comparison.

Circuitry testing method and circuitry testing device

An exemplary TFT substrate includes a substrate, signal lines, a common electrode, and a pixel electrode. The signal lines are arranged on the substrate along two perpendicular directions. One of each two signal lines perpendicular to each other includes a plurality of segments. Every two adjacent segments are arranged on two opposite sides of the other signal line of the two signal lines. The TFT substrate further includes a connection line. The connection line interconnects the two adjacent segments. The common electrode is arranged in a same layer as the connection line, and overlaps the segmented signal line along a direction perpendicular to the substrate.

Thin film transistor substrate

An exemplary electro-wetting display (EWD) device includes a plurality of sub-pixel units. Each sub-pixel unit defines two opposite long sides and two opposite short sides. Each sub-pixel unit includes a first substrate, a second substrate facing toward the first substrate, a conductive first liquid and a polar second sandwiched between the first substrate and the second substrate, and an electrode. The first and second liquids are immiscible. The electrode is disposed at a surface of the second substrate facing the first liquid. The electrode defines an opening. A length of the opening as measured parallel to the nearest short side is not less than 0.8 times a length of the nearest short side.

Electro-wetting display device

An exemplary anti-interference wiring assembly for a liquid crystal display device includes a base substrate (), gate lines () formed at the base substrate, anti-interference wires (), and data lines (). The anti-interference wires are provided between the gate lines and the data lines and are insulated from the gate lines and the data lines respectively. The anti-interference wires are configured for carrying signals having a reverse phase compared to signals carried by the corresponding gate lines.

Anti-interference wiring assembly for liquid crystal display device and method for reducing interference

An exemplary light source device () includes a power supply (), a light source (), and a photodetector (). The photodetector includes a light sensor () and a resistor () connected in parallel. The power supply, the light source, and the photodetector are connected in series. When the intensity of ambient light increases, a resistance of the light sensor decreases so as to increase a light intensity of the light source. When the intensity of ambient light decreases, the resistance of the light sensor increases so as to decrease the light intensity of the light source.

Light source device and method for modulating brightness of light emitted by same and liquid crystal display using same

An exemplary thin film transistor substrate () includes a base substrate () and a gate electrode () formed on the base substrate. The gate electrode includes a bonding layer () formed on the base substrate and an electrically conductive layer () formed on the bonding layer. The bonding layer includes one of aluminum oxide and zirconium dioxide.

Thin film transistor substrate with bonding layer and method for fabricating the same

An exemplary repairing method includes providing a substrate having a plurality of conducting lines; detecting a broken position of one of the conducting lines; switching on a nozzle; and forming a copper layer at the broken position on the substrate. The repairing method of the present invention employing a repairing device for performing a chemical vapor deposition (CVD) method to forming the copper layer at a position of the broken defect of one of the conducting lines.

Device for repairing conducting line and repairing method using same

An exemplary method for fabricating a polysilicon layer includes the following steps. A substrate () is provided and an amorphous silicon layer () is formed over the substrate. An excimer laser generator () for generating a pulse excimer laser beams collectively having the shape of a generally rectangular shaft is provided to melt a first area () of the amorphous silicon layer with the pulse excimer laser beams. The excimer laser generator is moved a distance to melt a second area of the amorphous layer spaced a short distance away from the first area. At least a subsequent third melted area spaced a short distance away from the second melted area is formed, with each subsequent melted area is spaced as short distance away from the immediately preceding melted area.

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Miao-Li, Taiwan

Shuo-Ting Yan