Nagoya University

Mitsubishi Electric Corporation

Central Glass Company, Limited

Shunta Harada

Toru Ujihara

Takeharu Kuroiwa

Takanori Tanaka

Makoto Kuwahara

Tomonori Umezaki

Tomoaki Furusho

Fumiaki Ichihashi

Daiki Koike

Daiki Shimura

Kenta Murayama

Kazuaki Seki

Can Zhu

Mitsuya Nagaoka

It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1&#xd7;10cmor more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1&#xd7;10cm.

Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device

Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.

Method for producing crystal of silicon carbide, and crystal production device

A technique of measuring energy of electrons excited by exposing a semiconductor material to solar ray is proposed. A surface layer having a negative electron affinity is formed on the surface of a semiconductor material. The semiconductor material is placed in a vacuum environment and exposed to solar ray. Photoelectrons emitted from the surface layer having the negative electron affinity are guided to an energy analyzer, and the energy of electrons excited by the solar ray is measured. Since the surface layer having the negative electron affinity is used, the photoelectrons are obtained from the electrons excited by the solar ray, and thereby energy measurement becomes possible.

Method and device for measuring energy of electrons excited by sunlight

Growing community of inventors

Nagoya, Japan

Shunta Harada