Brillnics Singapore Pte. Ltd.

Mitsubishi Heavy Industries Limited

Brillnics, Inc.

The Ritsumeikan Trust

Brillnics Japan Inc.

Brillinics Inc.

Shunsuke Tanaka

Isao Takayanagi

Kazuya Mori

Shinichiro Matsuo

Toshinori Otaka

Takumi Hori

Hiromu Okamoto

Hidetaka Kafuku

Katsuhiko Ariyoshi

Shunsuke Okura

Takao Ito

Yasuharu Suda

Yuichi Otani

Takeshi Fujino

Mitsuru Shiozaki

Takaya Kubota

Masayoshi Shirahata

Shusuke Iwata

Yasushi Takayama

Naoto Yasuda

Tomoki Hanada

Takahiro Akutsu

Naotaka Komatsu

Hisanori Watanabe

Hiroki Mitsui

Hayao Kurono

Shuhei Dobara

Takeshi Kumaki

Takuma Hasegawa

Saswatee Banerjee

Provided are a solid-state imaging device, a method for manufacturing a solid-state imaging device and an electronic apparatus that produce little crosstalk between adjacent sub-pixels, can reduce the influence of the luminance shading, and can even prevent degradation in the sensitivity at the optical center. A multi-pixel includes a back-side separating part separating a plurality of adjacent sub-pixels from each other, and a lens part including a single microlens allowing light to enter photoelectric converting regions of sub-pixels. Here, the optical center of the microlens is positioned on the location where the back side separating part is formed, and the back side separating part is formed such that at least the optical center region thereof exhibits lower reflection than the other region of the back side separating part.

Solid-state imaging device, method for manufacturing solid-state imaging device and electronic apparatus having a multi-pixel having a back side separating part

A pit gate includes a gate body which is inserted between a pool portion storing water and a canal portion connected to the pool portion and is configured to change a flow state of the water, and a seal portion () which is accommodated in a groove-shaped accommodation recess formed in the gate body and seals between the pool portion and the gate body. The seal portion () includes a low-rigidity portion () which is relatively easily deformed by a load according to a water pressure from the pool portion side, and a high-rigidity portion () which is provided on the pool portion side of the low-rigidity portion and is not easily deformed relatively by the load.

Pit gate, pit equipment, nuclear power facility, and pit gate installation method

A pixel PXL includes a first photodiode PDSL and a second photodiode PSLS having different well capacities and responsivities, transfer transistors TGSL-Tr, TGLS-Tr for transferring the charges stored in the photodiodes to a floating diffusion FD, and a capacitance changing partfor changing the capacitance of the floating diffusion depending on a capacitance changing signal. The first well capacity of the first photodiode PDSL is smaller than the second well capacity of the second photodiode PDLS, and the first responsivity of the first photodiode PDSL is larger than the second responsivity of the second photodiode PDLS. With these configurations, it becomes possible to realize a widened dynamic range, prevent the read-out noise from affecting the performance, and eventually achieve improved image quality.

Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus

One object is to provide a solid-state imaging device that can capture visible light images such as RGB images and infrared images such as NIR images and maintain a high light-receiving sensitivity for infrared light, a method of driving such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes: a pixel part having unit pixel groups arranged therein, the unit pixel groups each including a plurality of pixels at least for visible light that perform photoelectric conversion; and a reading part for reading pixel signals from the pixel part, wherein the plurality of pixels for visible light have a light-receiving sensitivity for infrared light, and in an infrared reading mode, the reading part is capable of adding together signals for infrared light read from the plurality of pixels for visible light.

A shaft sealing structure for a rotation shaft, includes a sealing ring having ends formed by removal of its part. The ends abutting each other are continuous in the circumferential direction when the sealing ring is reduced in diameter to a radially inner side. The sealing ring is provided along the circumferential direction of the rotation shaft so as to be contactable with an outer peripheral surface of the rotation shaft. The structure also includes a pressing member configured to be movable between a pressing position and a retracted position; an elastic member configured to bias the pressing member toward the pressing position by elastic force; and a support member configured to support the pressing member at the retracted position against the elastic force, and to allow the pressing member to move to the pressing position at a predetermined temperature.

Shaft sealing structure and primary coolant circulation pump

A solid-state imaging deviceincludes a pixel portionin which a plurality of pixels including photodiodes are arranged in rows and columns, a reading partfor reading pixel signals from the pixel portion, and a key generation partwhich generates a unique key by using at least one of pixel fluctuation information or reading part fluctuation information. According to this configuration, the tamper resistance of the unique key can be secured and consequently alteration and falsification of images can be prevented.

Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus with physically unclonable function

This solid-state imaging devicehas: a photosensitive part that includes pixel portions, which are disposed in a matrix, and charge transfer partsfor transferring, by the column, the signal charge of the pixel portions; a plurality of charge storage partsthat accumulate the signal charges transferred by the plurality of charge transfer parts of the photosensitive part; a relay partthat relays the transfer of the signal charges transferred by the plurality of charge transfer parts to each charge storage part; an output partthat outputs the signal charges of the plurality of charge storage parts as electric signals; a first substrateat which the photosensitive unitis formed; and a second substrateat which the charge storage partand output unitare formed. The first substrate and second substrate are stacked together, and the relay partelectrically couples the charge transfer parts of the first substrate to the charge storage parts of the second substrate by means of a connecting parts passing through the substrates outside the photosensitive region of the photosensitive part.

Solid-state imaging device, method for producing solid-state imaging device, and electronic apparatus

A pinned photodiode has a substrate having a first substrate side to which light is illuminated and a second substrate side opposite the first substrate side, a photoelectric conversion part including a first conductivity type semiconductor layer buried into the substrate and having a photoelectric conversion function for the received light and a charge accumulation function, a second conductivity type separation layer formed in the side portion of the first conductivity type semiconductor layer in the photoelectric conversion part, and one charge transfer gate part capable of transferring the charge accumulated in the photoelectric conversion part. The photoelectric conversion part, in at least a portion of the first conductivity type semiconductor layer, includes at least one second-conductivity type semiconductor layer forming at least one sub-area in a direction perpendicular to a normal line of the substrate and having a junction capacitance component together with the first conductivity type semiconductor layer.

Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus

A solid state imaging device has: a photosensitive part containing a plurality of charge transfer parts that transfer, in column units, the signal charges of a plurality of photoelectric conversion elements disposed in a matrix; a conversion/output unit that converts, to an electrical signal, the signal charges forwarded by the charge transfer parts; a peripheral circuit part that performs a predetermined process with respect to the electrical signals from the conversion/output part; a relay part that relays the forwarding to the peripheral circuit part of the electrical signal from the conversion/output part; a first substrate where a photosensitive part and the conversion/output part are formed; and a second substrate where the peripheral circuit part is formed. The first and second substrates are stacked together, and the relay part electrically connects the conversion/output part formed at the first substrate to the peripheral circuit part formed at the second substrate.

Solid-state imaging device, method for producing solid-state imaging device, and electronic apparatus using photoelectric conversion elements

Growing community of inventors

Tokyo, Japan

Shunsuke Tanaka