Renesas Electronics Corporation

Brillnics Japan Inc.

The Ritsumeikan Trust

Brillnics Singapore Pte. Ltd.

Brillnics, Inc.

Tohoku Techno Arch Co., Ltd.

Shunsuke Okura

Isao Takayanagi

Fukashi Morishita

Takeshi Fujino

Mitsuru Shiozaki

Takaya Kubota

Masayoshi Shirahata

Ken Miyauchi

Koji Shida

Hideki Owada

Sangman Han

Hiroshi Kato

Junichi Nakamura

Toshinori Otaka

Kazuya Mori

Masato Yamaguchi

Mitsuo Magane

Shigetoshi Sugawa

Shinji Ohsawa

Hirokazu Shimizu

Kazuhiro Ueda

Shinichiro Matsuo

Kenichiro Ishikawa

Shunsuke Tanaka

Shusuke Iwata

Takeshi Kumaki

Norio Yoshimura

Ai Otani

Kazuki Tatsuta

Ryotaro Hotta

In a pixel signal processing part, a first input switch and an output switch are turned on and off in phase. When the first input switch and the output switch are ON and the second input switch is OFF, a first auto-zero switch and a second auto-zero switch are kept in the ON state to connect the second node to the reference potential (GND), so that a sampling capacitor, a feedback capacitor, and an auto-zero capacitor are operated in respective operation ranges of the capacitors, and the feedback capacitor is kept constant according to a difference of the input pixel signals, thereby making the output of the amplifier in linear response to the input signal.

Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus

A solid-state imaging device, a method for driving a solid-state imaging device and an electronic apparatus are capable of reducing kTC noise of a LCG signal, preventing a drop in SNR at the conjunction point between a HCG signal and the LCG signal, and eventually achieving improved image quality. At a start of a reset period, first and second reset transistors are switched into a conduction state. During a predetermined first period after the reset period starts, the first reset line is kept connected to a reset potential. After the first period elapses, the second reset transistor is switched into a non-conduction state to switch the first reset line into a floating state, so that the first reset line has high impedance. After a second period elapses and when the reset period ends, the first reset transistor is switched into the non-conduction state.

One object of the present invention is to provide a solid-state imaging device, a method for fabricating a solid-state imaging device, and an electronic apparatus that implement both a wide dynamic range and a high sensitivity. A storage capacitor serving as a storage capacitance element includes a first electrode and a second electrode on a second substrate surface side. The first electrode is formed of a p+ region (the second conductivity type semiconductor region) formed in the surface of a second substrate surface of a substrate, and the second electrode is formed above the second substrate surface so as to be opposed at a distance to the first electrode in the direction perpendicular to the substrate surface. The first electrode and the second electrode are arranged so as to spatially overlap with a photoelectric conversion part in the direction perpendicular to the substrate surface.

Solid-state imaging device, method for fabricating solid-state imaging device, and electronic apparatus

Provided are a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus capable of reading signals produced with different conversion gains and having different signal directions. A pixel signal processing partincludes a first reading partand a second reading part. Of a pixel signal PIXOUT input into an input node ND, the first reading partinverts the signal direction of a first-conversion-gain signal (HCGRST, HCGSIG) and outputs an inverted first-conversion-gain signal (HCGRST, HCGSIG), which has been subjected to inversion and amplification, to an AD converting partvia a connection node ND. Of the pixel signal PIXOUT input into the input node ND, the second reading partkeeps the signal direction of a second-conversion-gain signal (LCGSIG, LCGRST) unchanged, and outputs a non-inverted second-conversion-gain signal (LCGSIG, LCGRST) to the AD converting partvia the connection node ND

A solid-state imaging device includes a pixel part, a reading part for reading a pixel signal from the pixel part and a response data generating part including a fuzzy extractor. The response data generating part generates response data including a unique key in association with at least one selected from among variation information of pixels and variation information of the reading part. The response data generating part generates, when regenerating a key, a unique key using helper data acquired in generation of an initial key, variation information acquired in the regeneration of the key, and reliability information determined based on the variation information acquired in the regeneration of the key.

A fuzzy extractor includes an initial key generating part including a true random number generator, and a key regenerating part. The true random number generator generates a true random number using a read-out signal read from the reading part or a pixel signal read from the pixels of the pixel part in a true random number generation mode. The initial key generating part generates helper data and an initial key based on the true random number generated by the true random number generator and variation information acquired as a response when the initial key is generated. The key regenerating part generates, when a key is regenerated, a unique key based on helper data acquired when the initial key is generated and variation information acquired as a response including an error when the key is regenerated.

One object is to provide a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus capable of removing a noise gap at a connection point between the low conversion gain data and the high conversion gain data, suppressing increase of power consumption and circuit areas, providing a wide dynamic range, and thus achieving high image quality. An amplifying part for amplifying a plurality of pixel signals read out from a pixel includes an amplifier. The amplifier includes an inverting input terminal and a non-inverting input terminal. The inverting input terminal includes a first inverting input channel and a second inverting input channel. The first inverting input channel is connected to a second node, and the second inverting input channel is connected to a third node. A capacitance of a second sampling capacitor is 8C, and a capacitance of a first sampling capacitor is C.

Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus having an amplifier with an inverting input terminal having at least a first inverting input channel and a second inverting input channel

In a solid-state imaging device, the first binning switchis formed such that a MOS capacitance and a wire capacitance of a wire connected to the binning switch, each having a value in accordance with an ON or OFF state, are added to a capacitance of a floating diffusion FD of a pixel PXL to be read, so as to optimize the capacitance of the floating diffusion FD and optimally adjust a conversion gain in accordance with a mode. This operation increases an image quality.

A pixel signal includes a first pixel signal and a second pixel signal. The first pixel signal includes a read-out reset signal and a read-out luminance signal that are read out in the stated order from a pixel in a first operation, and the second pixel signal includes a read-out luminance signal and a read-out reset signal that are read out in the stated order from the pixel in a second operation. A reading circuitincludes an amplifying partfor amplifying the pixel signal, and an AD converting partfor analog-to-digital converting, in connection with a search signal, the pixel signal amplified by the amplifying part. A first search signal Vrampfor the first pixel signal and a second search signal Vrampfor the second pixel signal are configurable such that search levels thereof are inverted.

A solid-state imaging device having a pixel portion in which a plurality of pixels each including a photodiode are arranged in rows and columns, a reading part for reading pixel signals from the pixel portion, and a key generation part which generates a unique key by using, as the key generation-use data, at least one of fluctuation information of pixels and fluctuation information of the reading part, wherein the key generation part includes a tamper resistance enhancement processing part for processing the key generation-use data to enhance the tamper resistance making it difficult to break the unique key as tamper resistance enhancement processing. Due to this, it is possible to generate a unique key having a high confidentiality. Further, it is possible to improve reproducibility and uniqueness of the unique ID, is possible to secure a high tamper resistance of the unique key, and consequently is possible to reliably prevent tampering and forgery of an image.

Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus for preventing tampering of an image

A solid-state imaging deviceincludes a pixel portionin which a plurality of pixels including photodiodes are arranged in rows and columns, a reading partfor reading pixel signals from the pixel portion, and a key generation partwhich generates a unique key by using at least one of pixel fluctuation information or reading part fluctuation information. According to this configuration, the tamper resistance of the unique key can be secured and consequently alteration and falsification of images can be prevented.

Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus with physically unclonable function

A solid-state imaging device having a pixel portion in which a plurality of pixels each including a photodiode are arranged in rows and columns, a reading part for reading pixel signals from the pixel portion, and a key generation part which generates a unique key by using, as the key generation-use data, at least one of fluctuation information of pixels and fluctuation information of the reading part, wherein the key generation part includes a tamper resistance enhancement processing part for processing the key generation-use data to enhance the tamper resistance making it difficult to break the unique key as tamper resistance enhancement processing. Due to this, a unique key having a high confidentiality can be generated. Further, reproducibility and uniqueness of the unique ID can be improved to secure a high tamper resistance of the unique key, and tampering and forgery of an image can be reliably prevented.

A solid-state imaging device comprised of a first substrate on which a pixel part is formed and a second substrate on which a column readout circuit is formed along a column level connection part, a row driver is formed along a row level connection part, and a pitch conversion-use interconnect region including a slanted interconnect for pitch conversion among interconnects is formed, the pitch conversion-use interconnect region is formed at least between the end part of the column readout circuit having a third pitch shorter than the pixel part and the end part of the column level connection part and/or between the end part of the row driver having a fourth pitch shorter than the pixel part and the end part of the row level connection part.

Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus

A pixel portion includes a first pixel array in which a plurality of photoelectric conversion reading parts of first pixels are arranged in a matrix, a holding part array in which a plurality of signal holding parts of first pixels are arranged in a matrix, and a second pixel array in which a plurality of photoelectric conversion reading parts of second pixels are arranged in a matrix, wherein, at the time of a rolling shutter mode, readout signals of the photoelectric conversion reading parts of the first pixels and the second pixels are immediately output to a first vertical signal line without following a bypass route and, at the time of a global shutter mode, held signals of the signal holding parts of the first pixels are output to a second vertical signal line. Due to this, a solid-state imaging device can prevent complication of the configuration.

A solid-state imaging device capable of reducing an area of a chip, capable of realizing both reduction of voltage and prevention of inversion video noise and consequently capable of realizing a higher image quality having a pixel portion and a clipping circuit capable of clipping a pixel readout voltage in accordance with a clipping voltage, wherein the pixel includes a photo-electric conversion element PD, a transfer element capable of transferring a charge accumulated in the photo-electric conversion element in a transfer period, a floating diffusion FD to which the charge accumulated in the photo-electric conversion element is transferred through a transfer element, a source-follower element which converts the charge in the floating diffusion to a voltage signal in accordance with a charge quantity, and a reset element which resets the floating diffusion to a predetermined potential in a resetting period, and the clipping circuit is arranged in an ineffective region of the pixel portion, a driving method for the same, and an electronic apparatus.

Growing community of inventors

Tokyo, Japan

Shunsuke Okura