Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Kioxia Corporation

Shunsuke Ochiai

Kei Watanabe

Shinichi Nakao

Atsuko Sakata

Mitsuhiro Omura

Yusuke Oshiki

Takeshi Ishizaki

Satoshi Wakatsuki

Yuya Matsubara

Soichi Yamazaki

Ryohei Kitao

Masayuki Kitamura

Junichi Wada

Toshiyuki Sasaki

Hideaki Sakurai

Kosuke Horibe

Ryoji Yoshikawa

A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.

Method for producing semiconductor device

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device includes forming a mask layer including a) one metal from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium, b) boron, and c) carbon on a layer to be etched. The mask layer is patterned. A hole or a groove is formed in the layer to be etched by performing dry etching on the layer to be etched using the patterned mask layer. The mask layer includes a first region and a second region. The first region includes boron and the second region includes boron such that a density of boron in the second region is different from a density of boron in the first region, or the first region includes carbon and the second region includes carbon such that a density of carbon in the second region is different from a density of carbon in the first region.

According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, a composition ratio of the tungsten being not less than 30%, patterning the mask layer, and performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.

According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched. The mask layer contains at least one type of a metal, boron, and carbon. The metal is selected from a group including tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium and iridium. A composition ratio of the metal is higher than a composition ratio of the boron and a composition ratio of the carbon. The method includes making a hole or a slit in the layer to be etched by performing a dry etching to the layer to be etched using the mask layer being patterned.

According to one embodiment, a pattern forming method includes: forming a guide layer, including a base layer and a neutralization film with a plurality of parallel line sections, on a processing target film, forming a polymer material containing first polymer segments and second polymer segments, on the guide layer, forming a self-assembly pattern having a plurality of first polymer portions containing the first polymer segment and extending in a direction of the line sections, and a plurality of second polymer portions containing the second polymer segment alternating with the first polymer portions and extending along the direction of the line sections, and selectively removing the second polymer portions. The widths of line sections of both ends of the plurality of line sections of the neutralization film are about two times the width of each first polymer portion or each second polymer portion.

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Yokkaichi Mie, Japan

Shunsuke Ochiai