Showa Denko K.k.

Resonac Corporation

Denso Corporation

Shunsuke Noguchi

Yohei Fujikawa

Hidetaka Takaba

Nobuyuki Oya

In a SiC wafer according to the present embodiment, a crystal surface has an offset angle of 0.5° or more and 10° or less in a first direction with respect to a surface of the SiC wafer, dislocations are confirmed when a first measurement point is confirmed through X-ray reflection topography using (3-3016) as a diffraction surface, the first measurement point is a point shifted by a length of ½ of a radius of the SiC wafer in the first direction from the center of a measurement region that is 5 mm or more inside from the outer circumferential end of the SiC wafer, the dislocations include first dislocations having an aspect ratio of 5 or more and second dislocations having an aspect ratio of less than 3, where the aspect ratio is obtained by dividing a long axis length of a rectangle that circumscribes the dislocation and has the smallest area by a short axis length, and at the first measurement point, the density of the first dislocations is higher than the density of the second dislocations.

SiC wafer and SiC epitaxial wafer

A SiC single crystal, wherein difference between the curving amount of the atomic arrangement surface on the cut surface cut along the <1-100> direction through the center in plan view and the curving amount of the atomic arrangement surface on the cut surface cut along the <11-20> direction that passes through the center of view and is perpendicular to the <1-100> direction is 60 μm or less.

SiC single crystal, method of manufacturing SiC ingot, and method of manufacturing SiC wafer

A method of acquiring a sample for evaluation of a SiC single crystal, comprising: a step of cutting a SiC ingot in a radial direction at a thickness position, which is located in a range from a curved surface which forms a distal end surface in a crystal growth direction to a seed crystal, to obtain a head member which includes the curved surface, wherein the SiC ingot used in the step is a SiC ingot in which SiC thereof is crystal-grown from a seed crystal along a c axis direction; and a step of polishing a silicon surface of the head member to obtain a sample for evaluation.

Method of acquiring sample for evaluation of SiC single crystal

A pedestalof the present invention is a pedestalfor a seedfor crystal growth, in which one main surfaceto which the seedadheres is flat, and the pedestal has a gas-permeable regionwhich a thickness from the one main surfacethat is formed to be locally thin.

Pedestal for supporting a seed for SiC single crystal growth which includes a gas-permeable region of reduced thickness

A crystal growth apparatus including: a heat source, a crucible including a container body in which a raw material can be received and a lid part on which a seed crystal can be mounted; a first heat insulating part which is disposed externally of the crucible and in which a first through-hole penetrating in a thickness direction is provided; a second heat insulating part which is disposed externally of the first heat insulating part and in which a second through-hole penetrating in a thickness direction is provided; a moving mechanism configured to move the first heat insulating part and the second heat insulating part relative to each other; and a radiation type temperature measuring unit configured to measure a temperature of the crucible via the first through-hole and the second through-hole.

Crystal growth apparatus

A method of manufacturing a tantalum carbide material of the present invention includes heating a tantalum material () interposed between a pair of graphite guide members (and) under an atmosphere of a carbon source-containing gas () at 1,500&#xb0; C. or higher for 0.5 hours or longer.

Method of manufacturing tantalum carbide material

Provided is an SiC substrate evaluation that includes irradiating a first surface of an SiC substrate which is cut out from an SiC ingot with excitation light before an epitaxial film is laminated on the first surface to perform photoluminescence measurement.

SiC substrate evaluation method, SiC epitaxial wafer manufacturing method, and SiC epitaxial wafer

In a method for evaluating tantalum carbide, a carbonization degree of tantalum carbide is evaluated by chromaticity.

Growing community of inventors

Hikone, Japan

Shunsuke Noguchi