Nichia Corporation

Citizen Electronics Co., Ltd.

Citizen Holdings Company, Ltd.

Shunsuke Minato

Masahiko Sano

Masatsugu Ichikawa

Daisuke Sanga

Toru Takasone

Motokazu Yamada

Junya Narita

Yohei Wakai

Yukio Narukawa

Kentaro Watanabe

Giichi Marutsuki

Toshiaki Ogawa

Nodoka Oyamada

Takeshi Kususe

Hirofumi Nishiyama

Masakatsu Tomonari

A light emitting apparatus includes: a mount substrate; one or more light emitting devices located above the mount substrate; a light conversion member located above the one or more light emitting devices; and a covering member that contains a light reflective material and covers the one or more light emitting devices. The light conversion member includes: a light emission surface facing upward, a lateral surface facing laterally, and a light receiving surface facing downward. The covering member covers the lateral surface of the light conversion member, and is interposed between the mount substrate and the one or more light emitting devices.

Light emitting apparatus and method for producing the same

A semiconductor light emitting element includes: a first light emitting part comprising: a first n-side nitride semiconductor layer; a first active layer located on the first n-side nitride semiconductor layer; and a first p-side nitride semiconductor layer located on the first active layer; and a second n-side nitride semiconductor layer. A bonding face of the first light emitting part and a bonding face of the second n-side nitride semiconductor layer are directly bonded. At least one void is present between the bonding face of the first light emitting part and the bonding face of the second n-side nitride semiconductor layer.

Semiconductor light emitting element and method of manufacturing semiconductor light emitting element

A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.

Light emitting device and method of manufacturing light emitting device

A light emitting element includes a first light emitting portion and a second light emitting portion. The first light emitting portion includes a first stacked body having a first n-type layer, a first active layer, a first p-type layer, a first tunnel junction layer, and a second n-type layer. The second light emitting portion includes a second stacked body having a third n-type layer, a second p-type layer, a second tunnel junction layer, a fourth n-type layer, a second active layer, a third p-type layer, and a transmissive conductive film. A resistivity of the second n-type layer is higher than a resistivity of the transmissive conductive film. A thickness of the second n-type layer is larger than a thickness of the transmissive conductive film.

Light-emitting element and method for manufacturing light-emitting element

A light emitting apparatus includes: a mount substrate; at least one light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the at least one light emitting device via at least one adhesive material layer, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the light emitting devices, and wherein a lateral surface of the light transparent member is located laterally inward of a lateral surface of the at least one light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.

A light emitting apparatus includes: a mount substrate; a first light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the first light emitting device via an adhesive material, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the first light emitting device, and wherein a first lateral surface of the light transparent member is located laterally inward of a lateral surface of the first light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.

A light emitting apparatus includes a mount substrate; two or more light emitting devices mounted on the mount substrate such that adjacent light emitting devices face each other at lateral surfaces thereof; a light transparent member positioned on upper surfaces of the light emitting devices, the light transparent member having a plate shape and being positioned to receive incident light emitted from the light emitting devices; and a covering member. In a plan view, the light transparent member is larger than each of the light emitting devices. The covering member contains a light reflective material and covers at least a lateral surface of the light transparent member.

A semiconductor light emitting element includes a first semiconductor layer, an active layer, a second semiconductor layer, a first conducting layer, a second conducting layer, and an insulating layer. The insulating layer is disposed at least on or above the upper surface of the second conducting layer. Holes are opened at given intervals through the second semiconductor layer to expose the first semiconductor layer at bottom surfaces of the holes. In each of the holes, the insulating layer covers from a side-wall surface of each of the holes to a first region provided on or above the upper surface of the second conducting layer around a top of each of the holes. The first conducting layer covers from the bottom surface of each of the holes to a second region provided over the second conducting layer and the insulating layer around the top of each of the holes.

Semiconductor light emitting element having first semiconductor layer and holes through second semiconductor layer to expose the first semiconductor layer

A method of producing a semiconductor light emitting element includes providing a semiconductor stack including a first semiconductor layer, an active layer, a second semiconductor layer, and a first insulating layer. An upper surface of the first insulating layer is partially covered with a mask. The semiconductor stack is etched to expose the first semiconductor layer in a region not covered by the mask. The mask is removed. A second insulating layer covering from the upper surface of the first insulating layer to an exposed region of the first semiconductor layer is provided. The second insulating layer is etched without masking to remove at least a portion of the second insulating layer covering the exposed region to expose the exposed region. A first conducting layer covering from the exposed region of the first semiconductor layer to a region above the upper surface of the first insulating layer is provided.

Semiconductor light emitting element and method of producing the same

A light emitting apparatus includes at least one light emitting device; a light transparent member that receives incident light emitted from the light emitting device; and a covering member. The light transparent member is a light conversion member that has an externally exposed light emission surface and a side surface contiguous to the light emission surface. The covering member contains a light reflective material, and covers at least the side surface of said light transparent member. A content of said light reflective material is not less than 30 wt %.

A semiconductor device has a light emitting element, and a resin layer; the light emitting element includes a semiconductor laminated body in which a first semiconductor layer and a second semiconductor layer are laminated in sequence, a second electrode connected to the second semiconductor layer on an upper surface of the second semiconductor layer that forms an upper surface of the semiconductor laminated body, and a first electrode connected to the first semiconductor layer on an upper surface of the first semiconductor layer in which a portion of the second semiconductor layer on one surface of the semiconductor laminated body is removed and a portion of the first semiconductor layer is exposed; and the resin layer is configured to cover at least a side surface of the light emitting element, and an upper surface of the resin layer is lower than the upper surface of the semiconductor laminated body.

Light emitting device including light emitting element, outer connection electrodes and resin layer

A semiconductor light-emitting element capable of increasing a strength of adhesion between an electrode and a protection film. The semiconductor light-emitting element includes a semiconductor structure having an n-type semiconductor layer and a p-type semiconductor layer. A transparent conductive film is disposed on the p-type semiconductor layer. An insulation film is disposed on the transparent conductive film. A p-side electrode layer is disposed on the insulation film. A protection film is disposed over the insulation film, and the protection film covers part of the p-side electrode layer.

Growing community of inventors

Anan, Japan

Shunsuke Minato