Sumco Corporation

Sumico Corporation

Shunsuke Mikuriya

Shinichi Ogata

Kazushige Takaishi

Ryuichi Tanimoto

Tomonori Miura

Keiichi Takanashi

Shigeru Okuuchi

Ichiro Yamazaki

Yuichi Nakayoshi

Hironori Nishimura

Ichiro Yamasaki

Tetsurou Taniguchi

Provided is a double-sided polishing method of a wafer in which the wafer, which has been set in a wafer loading hole of the carrier, is compressed and held along with the carrier with an upper platen and a lower platen and the upper platen and the lower platen are rotated while supplying slurry to the wafer. The method includes: previously measuring an inclination value of a main surface of each of a plurality of carriers in the vicinity of the edge of the wafer loading hole; selecting, from among the plurality of carriers, those for which the inclination value is equal to or smaller than a threshold based on the measurement results of the inclination value; and applying the double-sided polishing to a wafer using the selected carrier.

Double-sided wafer polishing method

Provided is a method of double-side polishing a silicon wafer using a double-side polishing apparatus, the method including in succession: a first polishing step of performing double-side polishing while supplying a first polishing agent that is an alkaline aqueous solution containing abrasive grains to the polishing cloths; a polishing agent switching step of stopping the supply of the first polishing agent and starting the supply of a second polishing agent that is an alkaline aqueous solution containing a water-soluble polymer with no abrasive grains, with the polishing cloths of the upper plate and the lower plate being in contact with the front surface and the back surface of the silicon wafer, respectively and with the upper plate and the lower plate being continuously rotated; and a second polishing step of performing double-side polishing while supplying the second polishing agent to the polishing cloths.

Method of double-side polishing silicon wafer

Provided a method of producing a carrier which make it possible to prevent the reduction in the flatness of a semiconductor wafer even if the semiconductor wafer is subjected to repeated double-side polishing procedures. The method of producing a carrier including a metal portion and a ring-shaped resin portion includes: a preparation step of preparing the metal portion and the resin portion (Step S); a placement step of placing the resin portion in the retainer opening in the metal portion (Step S); and a resin portion polishing step of polishing both surface of the resin portion (Step S). The method includes, prior to the resin portion polishing step (Step S), a production stage swelling step of swelling the resin portion placed in the retainer opening in the metal portion by impregnating the resin portion with a first liquid (Step S).

Method of producing carrier and method of polishing wafer

Disclosed is a method for polishing a silicon wafer, wherein a surface to be polished of a silicon wafer is rough polished, while supplying a polishing liquid, which is obtained by adding a water-soluble polymer to an aqueous alkaline solution that contains no free abrasive grains, to a polishing cloth. Consequently, the surface to be polished can be polished at high polishing rate and the flatness of the edge portion including roll-off and roll-up can be controlled.

Method for polishing silicon wafer and polishing liquid therefor

An object of the present invention is to provide a method of polishing silicon wafers, capable of suppressing generation of undesired sounds from carriers and reducing the thickness variation of the wafers after polished. The method is a wafer polishing method in which wafersare polished by supplying a polishing solution to surfacesof a pair of polishing padspositioned above and below carrierseach having a circular holefor retaining the wafers, the carriersbeing thinner than the wafers; and sliding the polishing padsrelatively to the carriers, thereby simultaneously polishing both surfaces of the wafersretained in the carriers. The method is characterized in that information sourced from the carrierswhen a difference between the thickness of the carriersand the thickness of the wafersreaches a predetermined value is detected to calculate the thickness of the wafers, thereby terminating polishing.

Wafer polishing method

Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus leading to an increase in productivity and a reduction in cost, and reduces the density of LPDs attributable to processing and occurring in the front surface of a mirror-polished wafer, thus improving the surface roughness of the wafer front surface.

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Tokyo, Japan

Shunsuke Mikuriya