Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Shunsuke Maruyama

Shuji Manda

Ryosuke Matsumoto

Toshifumi Wakano

Takeshi Yanagita

Hideki Minari

Suguru Saito

Tomomasa Watanabe

Yoshifumi Zaizen

Tetsuji Yamaguchi

Tomoyuki Hirano

Keiji Tatani

Yasushi Maruyama

Yusuke Tanaka

Yoshiaki Inada

Taichi Natori

Hayato Iwamoto

Takashi Nagano

Shinichi Yoshida

Keiichi Nakazawa

Junichiro Fujimagari

Shinpei Yamaguchi

Hirotsugu Takahashi

Shigehiro Ikehara

Atsushi Toda

Nobutoshi Fujii

Hideo Shimizu

Mamoru Suzuki

Koji Kikuchi

Shin Iwabuchi

Noriyuki Futagawa

Shoji Kobayashi

Eiichiro Dobashi

Motonobu Torii

Hironori Hoshi

Toshikazu Shibayama

Torii Motonobu

Hoshi Hironori

Kikuchi Koji

Yuya Kumagai

There is provided a light-detecting device. A light-detecting device includes a first substrate including a first electrode, a semiconductor layer, a first insulating film, and a via, and a second substrate that faces the first substrate and is electrically connected to the semiconductor layer through the via. The semiconductor layer includes a compound semiconductor material. The first electrode includes a first portion and the second portion. The first portion of the first electrode is in contact with the semiconductor layer, and the second portion is in contact with both the first insulating film and the via.

Semiconductor element and electronic apparatus

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Light receiving element and electronic apparatus

An imaging element including: a photoelectric conversion layer including a compound semiconductor material; a contact layer disposed to be stacked on the photoelectric conversion layer and including a diffusion region of first electrically-conductive type impurities in a selective region; a first insulating layer provided to be opposed to the photoelectric conversion layer with the contact layer interposed therebetween and having a first opening at a position facing the diffusion region; and a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.

Imaging element, semiconductor element, and electronic apparatus

A solid-state imaging device including a photoelectric conversion film provided over a plurality of pixels, a first electrode electrically coupled to the photoelectric conversion film and provided to each pixel, a second electrode opposed to the first electrode, the photoelectric conversion film being interposed between the second electrode and the first electrode, a first electric charge accumulation section, a reset transistor that is provided to each pixel, and an electric potential generator that applies, during a period in which the signal electric charges are accumulated in the first electric charge accumulation section, an electric potential VPD to the first electrode of each of at least one or more pixels, an electric potential difference between the first electrode and the second electrode when the electric potential VPD is applied to the first electrode being smaller than an electric potential difference when a reset electric potential is applied to the first electrode.

Solid-state image device and imaging apparatus

A solid-state imaging element including a photoelectric conversion layer of a first electrical conductivity type including a plurality of pixel regions, an electrode electrically coupled to the photoelectric conversion layer and provided for each of the pixel regions, a semiconductor layer provided between the electrode and the photoelectric conversion layer and having a bandgap larger than a bandgap of the photoelectric conversion layer, a diffusion part disposed in a vicinity of an edge of the pixel region and including an impurity of a second electrical conductivity type that is diffused from the semiconductor layer across the photoelectric conversion layer, and a non-diffusion part provided inside the diffusion part and not including the impurity of the second electrical conductivity type in the photoelectric conversion layer.

Solid-state imaging element and imaging apparatus

A light-receiving device of an embodiment of the present disclosure includes a photoelectric conversion layer that includes a first compound semiconductor with a first conductivity type and absorbs a wavelength of an infrared region, a first semiconductor layer formed on the photoelectric conversion layer, and an insulation layer formed to surround the photoelectric conversion layer and the first semiconductor layer, the first semiconductor layer having a second conductivity-type region at a middle region excluding a periphery facing the photoelectric conversion layer.

Light-receiving device, method of manufacturing light-receiving device, and electronic apparatus

The present disclosure relates to a stacked lens structure and a method of manufacturing the same, and an electronic apparatus by which it is possible to realize miniaturization of a lens module. A stacked lens structure includes plural substrates with lens stacked on one another, the substrate with lens each having a lens disposed on inside of a through-hole formed in the substrate. In regard of side surfaces at side parts corresponding to sides of a rectangle surrounding the substrate with lens in plan view as viewed in an optical axis direction, a width and a shape are the same among all the substrates with lens, whereas in regard of side surfaces at opposite angle parts corresponding to opposite angles of the rectangle, the width or shape differs between at least two substrates with lens. The present technology is applicable, for example, to a lens module or the like.

Stacked lens structure and method of manufacturing the same, and electronic apparatus

The present technology relates to a solid-state image pickup device that can suppress dark current thereby to suppress picture quality degradation. A solid-state image pickup device includes a pixel array region in which pixels each including a photoelectric conversion unit having one of a chemical semiconductor, amorphous silicon, germanium, a quantum dot photoelectric conversion film and an organic photoelectric conversion film are disposed two-dimensionally in rows and columns. The pixel array region has a voltage application pixel on an outermost circumference of the pixel array region or on the outer side with respect to an effective pixel region of the pixel array region, the voltage application pixel being one of the pixels to which a fixed voltage is normally applied. The present technology can be applied, for example, to a solid-state image pickup device and so forth.

Solid-state image pickup device

An imaging unit includes a photoelectric conversion layer including a compound semiconductor and having a light incident surface, and a light shielding portion provided in an optical path of light incident on the light incident surface and shielding light having a wavelength of less than 450 nm.

Imaging unit

Imaging devices and electronic apparatuses incorporating imaging devices or image pick-up elements are provided. An imaging device as disclosed can include a substrate, a first opto-electronic converter having a first area formed in the substrate, and a second opto-electronic converter having a second area formed in the substrate. The first area is larger than the second area. In addition, a light blocking wall can extend from a first surface of the substrate such that at least a portion of the light blocking wall is between the first opto-electronic converter and the second opto-electronic converter.

Image pick-up apparatus

A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.

Solid-state image sensor, method of producing the same, and electronic apparatus

A light receiving device includes: a photoelectric conversion layer that includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electrical charges; a plurality of contact layers that include a second compound semiconductor, and are provided on the photoelectric conversion layer at spacing intervals with respect to one another; and a covering layer that is formed to cover a portion corresponding to the spacing intervals of a front surface of the photoelectric conversion layer and side surfaces of the respective contact layers, and includes a Group IV semiconductor.

Light receiving device, method of manufacturing light receiving device, imaging device, and electronic apparatus

Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

Growing community of inventors

Kanagawa, Japan

Shunsuke Maruyama