Tohoku University

Mitsubishi Chemical Corporation

Ca, Inc.

Piezo Studio Inc.

Tohoku Techno Arch Co., Ltd.

Shunsuke Kurosawa

Akira Yoshikawa

Yuui Yokota

Kei Kamada

Yasuhiro Shoji

Yuji Ohashi

Keiji Yamahara

Akira Suzuki

Yui Yokota

Kenji Inoue

Koji Hazu

Yu Igarashi

Mototaka Arakawa

Kentaro Horibe

Takahiko Horiai

Tetsuya Kawano

Toetsu Shishido

Rikito Murakami

Akihiro Yamaji

Tetsuo Kudo

Takayuki Nihei

A scintillator, having a composition represented by the following general formula (1), including a substitution element A, the substitution element A comprising at least La, and a total molar content of the substitution element A being 0.00001 mol or more and 0.05 mol or less in 1 mol of the scintillator, and further including an activator element B, the activator element B being constituted from Ce, having a perovskite-type crystal structure, and exhibiting a linear transmittance of light at a wavelength of 800 nm, at a thickness of 1.9 mm, of 30% or more. QMO. . . (1): wherein Q represents one or more elements selected from the group consisting of Ca, Sr and Ba; M represents Hf; Q and M are each optionally substituted with other element at a proportion of 20% by mol or less; and x and y respectively satisfy 0.5≤x≤1.5 and 0.7≤y≤1.5.

Scintillator and radiation detector

The present invention aims to provide a scintillator which has a short fluorescence decay time, whose fluorescence intensity after a period of time following radiation irradiation is low, and which shows largely improved light-transmittance. A scintillator represented by the following General Formula (1), the scintillator including Zr, having a Zr content of not less than 1500 ppm by mass therein, and being a block of a sintered body. QMO:A . . . (1) (wherein in General Formula (1), Q includes at least one or more kinds of divalent metallic elements; M includes at least Hf; and x, y, and z independently satisfy 0.5≤x≤1.5, 0.5≤y≤1.5, and 0.7≤z≤1.5, respectively).

The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AEME(GaAl)SiO(AE is an alkaline-earth metal, ME is Nb or Ta, 0&#x2264;x&#x2264;1, &#x2212;0.5&#x3c;a&#x2264;0 or 0&#x3c;a&#x3c;0.5, &#x2212;0.5&#x3c;b&#x2264;0 or 0&#x3c;b&#x2264;0.5, and &#x2212;0.5&#x3c;c&#x2264;0 or 0&#x3c;c&#x3c;0.5, excluding a=b=c=0). This makes it possible to suppress the formation of an impurity, and improve the yield and crystal manufacturing rate. The raw material is a raw material mixture prepared by mixing an alkaline-earth metal or its carbonate or oxide, Nb or Ta or its oxide, Ga or its oxide, Al or its oxide, and Si or its oxide.

Crystal material and method of manufacturing the same

To improve the Q value of a piezoelectric thin-film element in a state in which unnecessary vibration is suppressed, an acoustic reflection film () is affixed to a first electrode (), a piezoelectric single-crystal substrate () is thinned by polishing from the other surface () of the piezoelectric single-crystal substrate (), such that the first electrode () and piezoelectric thin film () are piled on the piezoelectric single-crystal substrate (). In this polishing, a pressure (polishing pressure) to the surface () during polishing in an electrode formation region where the first electrode () is formed differs from that in a non-electrode formation region around the electrode formation region. Consequently, the electrode formation region of the piezoelectric thin film (), where the first electrode () is formed, is made thinner than the non-electrode formation region around the electrode formation region.

Method for manufacturing piezoelectric thin-film element

An illuminant has a short fluorescence lifetime, high transparency, and high light yield and a radiation detector uses the illuminant. The illuminant is appropriate for a radiation detector for detecting gamma-rays, X-rays, &#x3b1;-rays, and neutron rays, and has high radiation resistance, a short fluorescence decay time and high emission intensity. The illuminant has a garnet structure using emission from the 4f5d level of Ce, and includes a garnet illuminant prepared by co-doping of at least one type of monovalent or divalent cation at a molar ratio of 7000 ppm or less with respect to all cations, to an illuminant having a garnet structure represented by general formula CeREMO(where 0.0001&#x2264;x&#x2264;0.3, 0&#x2264;y&#x2264;0.5 or 0&#x2264;y&#x2264;&#x2212;0.5, M is one type or two or more types selected from Al, Lu, Ga, and Sc, and RE is one type or two or more types selected from La, Pr, Gd, Tb, Yb, Y, and Lu).

Illuminant and radiation detector

A crystal material that is represented by a general formula (1): (REABM')(Si,M&#x2033;)O(1), the crystal material having a pyrochlore type structure, being a nonstoichiometric composition, and being a congruent melting composition, wherein in Formula (1), A contains at least one or more selected from Gd, Y, La, Sc, Yb, and Lu; B contains at least one or more selected from La, Gd, Yb, Lu, Y, and Sc; 0.1&#x2264;y&#x3c;0.4; RE contains at least one or more selected from Ce, Pr, Nd, Eu, Tb, and Yb; 0&#x3c;x&#x3c;0.1; M&#x2032; and M&#x2033; contain at least one or more selected from Li, Na, K, Mg, Ca, Sr, Ba, Ti, Zr, Hf, Fe, Ta, and W; 0&#x2264;s&#x3c;0.01 and 0&#x2264;t&#x3c;0.01; and 0&#x3c;|&#x3b1;|&#x3c;0.3 and 0&#x2264;|&#x3b2;|&#x3c;0.3 and 0&#x2264;|&#x3b3;|&#x3c;0.5.

Crystal material, method for manufacturing crystal, radiation detector, nondestructive inspection apparatus, and imaging apparatus

A crystal material represented by a general formula (1):(GdLaMERE)MMO&#x2003;&#x2003; (1),where ME is at least one selected from Y, Yb, Sc, and Lu; RE is Ce or Pr; MM is at least one selected from Si and Ge; and ranges of x, y, and z are represented by the following (i): (i) 0.0&#x2266;x+y+z&#x3c;1.0, 0.05&#x2266;x+z&#x3c;1.0, 0.0&#x2266;y&#x3c;1.0, and 0.0001&#x2266;z&#x3c;0.05 (where, when RE is Ce, y=0 is an exception).

Crystal material, radiation detector, imaging apparatus, nondestructive inspection apparatus, and lighting apparatus

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Sendai, Japan

Shunsuke Kurosawa