Jsr Corporation

Shunsuke Kurita

Kazunori Takanashi

Hisashi Nakagawa

Tatsuya Sakai

Yoshio Takimoto

Toru Kimura

Hiromitsu Nakashima

Masayuki Motonari

Tooru Kimura

Satoshi Dei

Ryuichi Saitou

A semiconductor device production composition comprises a product obtained by mixing a metal compound and a compound represented by Formula (1) in a first organic solvent, and a second organic solvent. R and R' each independently represent a hydrogen atom, a linear or cyclic alkyl group having a carbon number of 2 to 20, a linear or cyclic alkylcarbonyl group having a carbon number of 2 to 20, an aryl group having a carbon number of 6 to 20, or an aryloxy group having a carbon number of 6 to 20, and part of the hydrogen atoms in the cyclic alkyl, cyclic alkylcarbonyl, aryl, or aryloxy group are substituted or unsubstituted.R&#x2014;O&#x2014;O&#x2014;R&#x2032;&#x2003;&#x2003;(1)

Composition and method of forming pattern using composition

An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a &#x3b2;-diketone, a &#x3b2;-keto ester, a &#x3b2;-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), Rrepresents an organic group having a valency of n. X represents &#x2014;OH, &#x2014;COOH, &#x2014;NCO or &#x2014;NHR, wherein Rrepresents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4.RX)&#x2003;&#x2003;(1)

Inorganic film-forming composition for multilayer resist processes, and pattern-forming method

A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed.

Pattern forming method

A composition for forming a resist underlayer film includes a polysiloxane and a solvent. The solvent includes an organic solvent having a standard boiling point of no less than 150.0&#xb0; C., and water. A content of the organic solvent is no less than 1% by mass and no greater than 50% by mass with respect to a total amount of the solvent. A content of water is no less than 1% by mass and no greater than 30% by mass with respect to the total amount of the solvent.

Composition for forming resist underlayer film and pattern-forming method

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Tokyo, Japan

Shunsuke Kurita