Murata Manufacturing Co., Ltd.

Shunsuke Kobayashi

Takayuki Kawano

A power amplifier circuit includes a power amplifier that amplifies the power of a high frequency signal, a power amplifier temperature detector circuit that includes a temperature detection element, the temperature detection element being thermally coupled with the power amplifier, a bias control signal generator circuit that generates a bias control signal for the power amplifier based on a temperature detection signal outputted from the power amplifier temperature detector circuit, and a regulator circuit that stabilizes the temperature detection signal. The power amplifier, the power amplifier temperature detector circuit, and the regulator circuit are formed in a first integrated circuit, and the bias control signal generator circuit is formed in a second integrated circuit. The substrate material (for example, GaAs) of the first integrated circuit has a higher cutoff frequency than the substrate material (for example, SOI) of the second integrated circuit.

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Kyoto, Japan

Shunsuke Kobayashi