Samsung Electronics Co., Ltd.

Shunsuke Kimura

Sungtae Kim

Sung Tae Kim

Jihoon Kang

Seung Ryong Han

Jitsuo Ota

Yongdok Cha

A micro light emitting diode (LED), including a first semiconductor layer doped with an n-type dopant; a second semiconductor layer doped with a p-type dopant; an active layer arranged between the first semiconductor layer and the second semiconductor layer, and configured to provide light; a first side surface including a vertical side surface of the first semiconductor layer; a second side surface tilted with respect to the first side surface, and including a first tilted side surface of the active layer and a second tilted side surface of the second semiconductor layer; an insulating layer arranged to surround the first side surface and the second side surface; and a reflective layer arranged to partially surround the insulating layer in an area of the insulating layer corresponding to the second side surface.

Micro light emitting diode and manufacturing method of micro light emitting diode

An LED panel includes a panel body having a substrate, a plurality of LED elements and a mold, and a light absorbing layer formed at a lateral side of the panel body to absorb at least one of ambient light or light emitted from the plurality of LED elements. The light absorbing layer prevents a seam formed by a gap between the adjacent LED panels from being visible. The light absorbing layer absorbs the external light incident on the gap or absorbs the light emitted from the LED element to the gap.

LED panel and display apparatus having the same

An LED, a manufacturing method thereof, and a display device including an LED are provided. Specifically, the disclosure relates to a flip-chip LED with high efficiency including a current confinement structure and a manufacturing method thereof, and a display device including such an LED. In particular, a flip-chip LED according to the disclosure includes a resistive area that surrounds a light-emitting layer and restricts current flow from the light emitting layer to the sidewalls.

Light emitting diode with ion implanted resistive area, manufacturing method of light emitting diode with ion implanted resistive area and display device including light emitting diode with ion implanted resistive area

Provided herein is a display apparatus including a light emitting diode and a lens for diffusing light generated from the light emitting diode. The lens includes a first emitting portion forming a first emitting surface, and a second emitting portion protruding from the first emitting portion and forming a second emitting surface, so that the light may be diffused by a protruding distance of the second emitting portion.

Growing community of inventors

Suwon-si, South Korea

Shunsuke Kimura