Kabushiki Kaisha Toshiba

Shunsuke Katoh

Yusuke Kawaguchi

Hitoshi Kobayashi

Keiko Kawamura

Masatoshi Arai

Bungo Tanaka

Takeru Matsuoka

Shunsuke Nitta

Shinya Ozawa

According to an embodiment, a semiconductor device includes a semiconductor layer, a first electrode, and a first insulating film. The first electrode extends in a first direction and is provided inside the semiconductor layer. The first insulating film is provided between the semiconductor layer and the first electrode, a thickness of the first insulating film in a direction from the first electrode toward the semiconductor layer increasing in stages along the first direction. The first insulating film has three or more mutually-different thicknesses.

Semiconductor device

A semiconductor device includes a first conductivity type first semiconductor region, a second semiconductor region on the first semiconductor region, a third semiconductor region on the second semiconductor region, a first insulating portion extending inwardly of, and surrounded by, the first semiconductor region, a gate electrode extending inwardly of the first insulating portion and spaced from the second semiconductor region in a second direction that intersects a first direction extending from the first semiconductor region to the second semiconductor region, by the first insulating portion, and a first electrode including a portion spaced from the first semiconductor region in the second direction by the first insulating portion, and surrounded by the first insulating portion and the gate electrode.

A semiconductor apparatus includes a drain region of a first-conductivity type, a drain electrode electrically coupled to the drain region, and a semiconductor layer of the first-conductivity type formed onto the drain region and having a first impurity concentration. The semiconductor apparatus further includes: a source region of the first-conductivity type formed on the semiconductor layer and having a second impurity concentration; a first source electrode electrically coupled to the source region; and a gate electrode formed via an insulating layer. The one end of the gate electrode is in a depth of the source region, and the other end is in a depth of the semiconductor layer or the drain region. A second source electrode is provided in the semiconductor layer under the gate electrodes via an insulating layer. A second spacing between the second source electrodes is larger than a first spacing between the gate electrodes.

Semiconductor apparatus

According to one embodiment, a semiconductor memory device includes a first semiconductor layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer is a first conductivity type. The second semiconductor layer is provided in a surface region of the first semiconductor layer and is the first conductivity type. The first electrode is provided inside a first trench extending in the first direction and opened to a surface of the second semiconductor layer. The second electrode is provided in a second trench extending in a second direction crossing the first direction and opened to the surface of the second semiconductor layer. A dimension from the surface of the second semiconductor layer to a lower end of the second electrode is shorter than a dimension from the surface of the second semiconductor layer to a lower end of the first electrode.

Growing community of inventors

Komatsu Ishikawa, Japan

Shunsuke Katoh