Tokyo Electron Limited

Shunsuke Ishida

Akinori Kitamura

Kenta Yasuda

In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a mixed gas of O, CFand HBr is used as an etching gas, and a second step in which a second etching gas comprising a mixed gas of Oand CFis used as an etching gas, are continuously and alternately repeated a plurality of times. At this time, a first high-frequency power of a first frequency and a second high-frequency power of a second frequency, which is lower than the first frequency, are applied to a lower electrode, and the first high-frequency power is applied in a pulse form.

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Miyagi, Japan

Shunsuke Ishida