Rohm Co., Ltd.

Tohoku University

Shunsuke Akasaka

Ken Nakahara

Masashi Kawasaki

Atsushi Tsukazaki

Yurina Amamoto

Koki Sakamoto

Tetsuo Fujii

Akira Ohtomo

Hiroyuki Yuji

Kentaro Tamura

Soichiro Arimura

Shunsuke Furuse

Yoshiaki Oku

Hiroshi Yaguma

Keisuke Wakamoto

A gas sensor includes: a substrate; an insulating layer arranged over the substrate; and a solid electrolyte layer, wherein the substrate is formed with a cavity that penetrates the substrate in a thickness direction of the substrate, wherein the insulating layer has a peripheral portion arranged over the substrate around the cavity, and a membrane portion which is located over the cavity and is connected to the peripheral portion, wherein the membrane portion includes a movable portion, wherein a through-hole, which penetrates the membrane portion around the movable portion in the thickness direction, is formed such that the movable portion is capable of being displaced along the thickness direction, and wherein the solid electrolyte layer is arranged over the movable portion.

Gas sensor

Provided is a flight control apparatus including a pair of sensors that are spaced apart in a vertical direction on a surface of a flying object which uses motive power of a power source powered by a battery to fly and that detect a physical quantity corresponding to a state of an airflow, and a control unit that controls a flight state of the flying object on the basis of a difference between outputs of the pair of sensors.

Flight control apparatus

Provided is a sensor including a substrate that includes a major surface, a sensor part that includes a gas flow path formed of a porous material, and at least one of a heater or a temperature sensor. The heater is capable of heating the sensor part, the temperature sensor is capable of measuring temperature of the sensor part, the sensor part and the at least one of the heater or the temperature sensor are stacked over the major surface, the at least one of the heater or the temperature sensor is an interconnect having forward tapered side surfaces, and the at least one of the heater or the temperature sensor includes a metal interconnect layer, and the forward tapered side surfaces of the interconnect overlap with the gas flow path in plan view of the major surface.

Sensor and manufacturing method thereof

Disclosed herein is a wind measuring system including a first flow sensor and plural second flow sensors. The first flow sensor and the plural second flow sensors each include a microheater including a board, an insulating film, and a heater. The board includes a first principal surface and a second principal surface. The board has defined therein an opening portion passing through the board along a direction from the first principal surface toward the second principal surface. The insulating film includes a peripheral portion disposed on the first principal surface, a central portion having the heater disposed thereon, and a connection portion extending from the central portion to be connected to the peripheral portion to support the central portion over the opening portion. The first flow sensor and the plural second flow sensors each output a signal that varies according to a change in electrical resistance value of the heater.

Wind measuring system

A gas concentration measurement system includes a limiting current-type gas sensor, a voltage source connected to the limiting current-type gas sensor, a current detector connected to the limiting current-type gas sensor, and a gas concentration arithmetic unit connected to the current detector. The voltage source supplies first and second voltages to the limiting current-type gas sensor. The first and second voltages generate first and second limiting currents corresponding to first and second gases, respectively, in the limiting current-type gas sensor. The current detector acquires first and second limiting current values of the limiting current-type gas sensor when the first and second voltages are applied to the limiting current-type gas sensor, respectively. The gas concentration arithmetic unit includes a difference acquiring section that acquires a difference between the second and first limiting current values and a gas concentration acquiring section that obtains concentration of the second gas based on the difference.

Gas concentration measurement system and gas concentration measurement method

Disclosed herein is a limiting-current type gas sensor including a solid electrolyte, a first electrode disposed on the solid electrolyte, a second electrode disposed on the solid electrolyte, and a gas feed passage extending between a gas inlet and a first portion of the first electrode, the first portion facing the solid electrolyte. The first electrode is a first porous metal electrode. The gas feed passage is formed of a first porous transition metal oxide having a second melting point higher than a first melting point of the first electrode. The first porous transition metal oxide is TaO, TiO, or CrO.

Limiting-current type gas sensor

Disclosed is a production system for methane, including a reaction vessel having a solid electrolyte membrane and an electrode group including at least a pair of electrodes arranged on the solid electrolyte membrane, in which one of the electrodes functions as a cathode side electrode, and the other electrode functions as an anode side electrode, and the one electrode that functions as the cathode side electrode includes a hydrogenation catalyst.

Production system and production method for methane

Disclosed is a thermal flow sensor including a base member and a cover. The base member includes a heater. The cover is formed by an SOI substrate including a silicon substrate, a silicon dioxide film, and a silicon film. The silicon film has a recessed portion defined therein. A main flow passage portion is defined by an exposed surface of the silicon dioxide film which is exposed from the silicon film and which defines a bottom surface of the recessed portion, the silicon film defining a side surface of the recessed portion, and a first principal surface of the cover.

Thermal flow sensor

A nitrogen oxide based gas sensor includes: a substrate provided with a beam structure having a MEMS structure; a heater disposed on the substrate; a lower electrode disposed on the heater, a solid electrolyte layer disposed on the lower electrode; an upper electrode disposed on a surface of the solid electrolyte layer facing the lower electrode and configured to introduce a measurement target gas; a cavity portion formed in the substrate; and a gas flow path disposed so as to connect the cavity portion and the lower electrode, wherein the gas sensor is configured to detect a concentration of nitrogen oxide in the measurement target gas.

Nitrogen oxide based gas sensor, oxygen pump, gas sensor apparatus, manufacturing method of gas sensor apparatus, and sensor network system

The limiting-current type gas sensor includes: a porous lower electrode disposed on a substrate; an insulating film disposed on the porous lower electrode; a solid electrolyte layer disposed on the porous lower electrode in an opening formed by patterning the insulating film, and further disposed on the insulating film surrounding the opening; and a porous upper electrode disposed on the solid electrolyte layer, wherein the insulating film realizes non-contact between an edge face of the solid electrolyte layer and the porous lower electrode, in order to suppress the intake of oxygen (O) ion from the edge face of the solid electrolyte layer, and thereby the surface-conduction current component between the porous upper electrode and the porous lower electrode can be reduced. There can be provided the limiting-current type gas sensor capable of reducing the surface-conduction current component and realizing low power consumption.

Limiting-current type gas sensor and fabrication method of the same, and sensor network system

To provide both a photodetecting element and a photodetecting device which can prevent generating of a plurality of current paths, and can detect with stability and high sensitivity regardless of a surface state instability of an optical absorption layer. The photodetecting element includes an optically transparent substrate, an optical absorption layer, an electrode, an electrode, an adhesive layer, an insulating film, and a package. The optical absorption layer is formed on the optically transparent substrate, and a part of each the electrodes is embedded in the optical absorption layer. The photodetecting unit is bonded junction down with the adhesive layer on the package. The optical absorption layer absorbs light of a specified wavelength selectively to be converted into an electric signal. The light to be measured is irradiated from a back side surface of the optically transparent substrate.

Photodetecting element having an optical absorption layer, photodetecting device having an optical absorption layer, and auto lighting device

Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range &#x3bb; and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range &#x3bb; is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.

Optical filter

A ZnO-based semiconductor device includes an n type ZnO-based semiconductor layer, an aluminum oxide film formed on the n type ZnO-based semiconductor layer, and a palladium layer formed on the aluminum oxide film. With this configuration, the n type ZnO-based semiconductor layer and the palladium layer form a Schottky barrier structure.

ZnO-based semiconductor device and manufacturing method thereof

Photodetection device

A p-type MgZnO-based thin film () is formed on a substrate () made of a ZnO-based semiconductor. The p-type MgZnO-based thin film () is composed so that X as a ratio of Mg with respect to Zn therein can be 0&#x2266;X&#x3c;1, preferably 0&#x2266;X&#x2266;0.5. In the p-type MgZnO thin film (), nitrogen as p-type impurities which become an acceptor is contained at a concentration of approximately 5.0&#xd7;10cmor more. The p-type MgZnO thin film () is composed so that n-type impurities made of a group IV element such as silicon that becomes a donor can have a concentration of approximately 1.0&#xd7;10cmor less. The p-type MgZnO thin film () is composed so that n-type impurities made of a group III element such as boron and aluminum which become a donor can have a concentration of approximately 1.0&#xd7;10cmor less.

Growing community of inventors

Kyoto, Japan

Shunsuke Akasaka