Xiamen Sanan Optoelectronics Technology Co., Ltd.

Shunping Chen

Xiaoqiang Zeng

Shaohua Huang

Qunfeng Pan

Jyh-Chiarng Wu

Chih-Wei Chao

Jianjian Yang

Daquan Lin

A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function.

Vertical light emitting diode and fabrication method

The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (); a light-emitting module on the conductive substrate (), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (), a light-emitting layer () and a second semiconductor layer () from top down; a first insulating layer () is arranged between the second semiconductor layer () of the first LED and the conductive substrate () for mutual isolation; an ohmic contact is formed between the second semiconductor layer () of the second LED and the conductive substrate (); a first conductive structure that connects the first semiconductor layer () of the first LED, the second semiconductor layer () of the second LED and the conductive substrate (); and a second conductive structure that connects the second semiconductor layer () of the first LED and the first semiconductor layer () of the second LED.

Vertical type AC-LED device and manufacturing method thereof

This invention discloses an AC-type vertical light emitting element and fabrication method thereof, which achieves polarity reversal of two LEDs via regional laser stripping and die bonding. The two LEDs are placed on a conductive substrate (e.g. Si substrate); therefore, the bonding pads of the two LEDs are on the back of the conductive substrate and the light emitting surfaces of the two LEDs, thus overcoming such problems of low light emitting efficiency and high thermal resistance of the traditional lateral structure.

Alternating current vertical light emitting element and manufacturing method thereof

A flip-chip light emitting diode (LED) includes: a substrate having a P-type pad electrode and an N-type pad electrode; a light-emitting epitaxial layer flip-chip mounted over the substrate, including, from top down, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is divided into a light-emitting region, an isolation region, and an electrode region. The light-emitting region and the electrode region are electrically isolated by the isolation region. The active layer and the p-type semiconductor layer are below the light-emitting region. The p-type semiconductor layer connects with the P-type pad electrode. The electrode region of the n-type semiconductor layer connects with the N-type pad electrode. A conductive connection portion on the n-type semiconductor layer connects the electrode region of the n-type semiconductor layer and the light-emitting region, realizing vertical current injection into the light-emitting epitaxial layer when an external power is connected.

Flip-chip light emitting diode and fabrication method

A vertical high-voltage light emitting device and a manufacturing method thereof. Polarities of two adjacent light emitting diodes (LEDs) are reversed by means of area laser stripping and die bonding, and the two diodes whose polarities are reversed are disposed on an insulating substrate comprising a bonding metal layer (). A conductive wire () is distributed on a surface of the light emitting device, so that a single LED unit () has a vertical structure, and multiple LEDs are connected in series to form a high-voltage LED, thereby solving the problems of low light emitting efficiency and large thermal resistance of a horizontal structure.

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Xiamen, China

Shunping Chen