Semiconductor Energy Laboratory Co., Ltd.

Other

Sharp Kabushiki Kaisha Corporation

Ricoh Company, Ltd.

Eastman-kodak Company

Takasago International Corporation

Shunpei Yamazaki

Jun Koyama

Yasuyuki Arai

Yoshiharu Hirakata

Toru Takayama

Hisashi Ohtani

Junichiro Sakata

Hajime Kimura

Yasuhiko Takemura

Satoshi Seo

Kengo Akimoto

Junichi Koezuka

Hideaki Kuwabara

Kenichi Okazaki

Masayuki Sakakura

Kiyoshi Kato

Hideomi Suzawa

Satoshi Teramoto

Koichiro Tanaka

Akiharu Miyanaga

Masashi Tsubuku

Mitsuaki Osame

Hiroyuki Miyake

Hidekazu Miyairi

Takeshi Fukunaga

Masahiko Hayakawa

Satoshi Murakami

Masaaki Hiroki

Toshimitsu Konuma

Toshiji Hamatani

Hongyong Zhang

Yukinori Shima

Hideto Ohnuma

Masami Jintyou

Akira Mase

Junya Maruyama

Hideki Uochi

Toshinari Sasaki

Hiroki Ohara

Kei Takahashi

Takeshi Nishi

Yoshiaki Oikawa

Atsuo Isobe

Kosei Noda

Hiromichi Godo

Masahiro Takahashi

Naoto Kusumoto

Takayuki Ikeda

Kensuke Yoshizumi

Setsuo Nakajima

Akihisa Shimomura

Hisao Ikeda

Osamu Nakamura

Koji Kusunoki

Koji Dairiki

Yasuhiro Jinbo

Shinya Sasagawa

Aya Anzai

Daisuke Matsubayashi

Hiroki Adachi

Tetsuhiro Tanaka

Tatsuya Honda

Yoshiyuki Kurokawa

Yoshifumi Tanada

Shingo Eguchi

Koji Ono

Daisuke Kubota

Yuugo Goto

Tatsuya Arao

Tatsuya Onuki

Yu Yamazaki

Nobuharu Ohsawa

Kouhei Toyotaka

Takeshi Osada

Hideaki Shishido

Atsushi Umezaki

Motomu Kurata

Ryoji Nomura

Takanori Matsuzaki

Yasuo Nakamura

Kazunori Watanabe

Yutaka Shionoiri

Susumu Kawashima

Yuta Endo

Yukio Tanaka

Shuhei Nagatsuka

Tomoaki Atsumi

Tetsuji Ishitani

Junpei Momo

Ryota Tajima

Kunihiko Suzuki

Harue Osaka

Tetsuji Yamaguchi

Hideko Inoue

Satoko Shitagaki

Yoshiyuki Kobayashi

Munehiro Kozuma

Hidekazu Takahashi

Tsunenori Suzuki

Hiroyuki Ogawa

A computer system with a small circuit area and reduced power consumption is used. The computer system includes a computer node including a processor and a three-dimensional NAND memory device. The three-dimensional NAND memory device includes a first string and a second string in different blocks. The first string includes a first memory cell, and the second string includes a second memory cell. On reception of first data and a signal including an instruction to write the first data, the controller writes the first data to the first memory cell. Then, the controller reads the first data from the first memory cell and writes the first data to the second memory cell. Thus, the computer node can eliminate a main memory such as a DRAM from the structure.

Computer system using 3D OS NAND

A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators. The first insulator, the second insulator, the fifth insulator, and the ninth insulator are each a metal oxide having an amorphous structure.

Semiconductor device and manufacturing method thereof

As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

Semiconductor device and method for manufacturing the same

A ferroelectric device () that includes a metal nitride film () with favorable ferroelectricity is provided. The ferroelectric device comprises a first conductor (), a metal nitride film over the first conductor, a second conductor () over the metal nitride film, a first insulator () over the second conductor, and a second insulator () over the first insulator. The first insulator includes regions in contact with the side surface of the metal nitride film and the side surface and the top surface of the second conductor; the metal nitride film has ferroelectricity; the metal nitride film contains a first element, a second element, and nitrogen; the first element is one or more elements selected from Group 13 elements; the second element is one or more elements selected from Group 2 elements to Group 6 elements and Group 13 elements other than the first element; the first conductor and the second conductor each contain nitrogen; the first insulator contains aluminum and oxygen; and the second insulator contains silicon and nitrogen.

Ferroelectric device and semiconductor device

A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.

Semiconductor device including metal oxide

A novel display device is provided. The display device includes a plurality of pixels each including a light-emitting device, a sensor device, a first circuit device, and a second circuit device. The light-emitting device and the sensor device are provided in a first layer. The first circuit device is provided in a second layer. The second circuit device is provided in a third layer. The light-emitting device includes a lower electrode, an upper electrode, and a light-emitting layer provided between the lower electrode and the upper electrode. The sensor device has a function of detecting light emitted from the light-emitting device. The first circuit device has a function of driving the light-emitting device or the sensor device. The second circuit device has a function of performing an arithmetic operation based on information output from the first circuit device. The first layer is provided over the second layer. The second layer is provided over the third layer.

Display device with light emitting device and light sensing device in one layer

A memory device occupying a small area is provided. In a memory cell including a reading transistor, a writing transistor, and a capacitor, the writing transistor is provided above the reading transistor. Alternatively, the reading transistor is provided above the writing transistor. An oxide semiconductor is used for a semiconductor layer where a channel of the writing transistor is formed. An oxide semiconductor is used for a semiconductor layer where a channel of the reading transistor is formed. Memory cells are arranged in a matrix.

Memory cell and memory device

An authentication system for an electronic device with a high security level is provided. The authentication system includes a data retention means that accumulates first data related to a state of the electronic device being used by a first user registered in advance and generates a first data group, a first authentication means that authenticates a second user operating the electronic device as the first user and releases a locked state, a data acquisition means that acquires second data related to a state of the electronic device being used by the second user in a state where the locked state is released, and a second authentication means that authenticates the second user as the first user on the basis of the first data group and the second data and sets the electronic device to the locked state when the second user is not authenticated. The data retention means has a function of deleting the oldest first data of the plurality of pieces of the first data included in the first data group.

Authentication system for electronic device

A battery control circuit with a novel structure, a battery protection circuit with a novel structure, and a power storage device including either of the battery circuits are provided. The power storage device includes a first circuit portion, a second circuit portion, a third circuit portion, and a secondary battery; the first circuit portion has a function of controlling charging of the secondary battery; the first circuit portion has a function of supplying the start time and the end time of the charging of the secondary battery to the third circuit portion; the second circuit portion has functions of generating a first voltage and a first current and supplying them to the third circuit portion; the third circuit portion has a function of generating a second voltage by charging the first current in a capacitor; and the third circuit portion has a function of comparing the first voltage and the second voltage.

Power storage device and method for operating power storage device

The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

Semiconductor device

A semiconductor device with high reliability is provided by the following steps: forming an oxide semiconductor; forming a first insulator in contact with the oxide semiconductor; forming a second insulator over the first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator, the second insulator, and the first insulator; cleaning the inside of the opening; embedding a conductor in the cleaned opening; forming the first insulator to include an excess-oxygen region; forming the second insulator to have a higher barrier property against oxygen, hydrogen, or water than the first insulator; and processing the opening to have a cylindrical shape or an inverted cone shape.

Semiconductor device and method for manufacturing semiconductor device

To provide an electronic device capable of a variety of display. To provide an electronic device capable of being operated in a variety of ways. An electronic device includes a display device and first to third surfaces. The first surface includes a region in contact with the second surface, the second surface includes a region in contact with the third surface, and the first surface includes a region opposite to the third surface. The display device includes first to third display regions. The first display region includes a region overlapping with the first surface, the second display region includes a region overlapping with the second surface, and the third display region includes a region overlapping with the third surface. The first display region has a larger area than the third display region.

Electronic device and driving method thereof

A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.

Metal oxide and semiconductor device

A glass substrate is reused. The mass productivity of a semiconductor device is increased. A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.

Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate

A novel display apparatus that is highly convenient, useful, or reliable is provided. The display apparatus includes a first pixel set, a second pixel set, a first conductive film, and a second conductive film; the first pixel set includes a first light-emitting device set and a first pixel circuit set; the first pixel circuit set includes a first group of pixel circuits; and the first group of pixel circuits include a first pixel circuit. The second pixel set includes a second light-emitting device set and a second pixel circuit set; the second light-emitting device set is electrically connected to the second pixel circuit set; the second pixel circuit set includes a second group of pixel circuits; and the second group of pixel circuits include a second pixel circuit. The first conductive film is electrically connected to the first group of pixel circuits and the second group of pixel circuits, and the second conductive film is electrically connected to the first pixel circuit and the second pixel circuit.

Display apparatus having pixel sets including light-emitting devices

Growing community of inventors

Tokyo, Japan

Shunpei Yamazaki