Semiconductor Energy Laboratory Co., Ltd.

Other

Sharp Kabushiki Kaisha Corporation

Ricoh Company, Ltd.

Eastman-kodak Company

Takasago International Corporation

Shunpei Yamazaki

Jun Koyama

Yasuyuki Arai

Yoshiharu Hirakata

Toru Takayama

Hisashi Ohtani

Junichiro Sakata

Yasuhiko Takemura

Hajime Kimura

Satoshi Seo

Kengo Akimoto

Junichi Koezuka

Hideaki Kuwabara

Kenichi Okazaki

Masayuki Sakakura

Kiyoshi Kato

Hideomi Suzawa

Satoshi Teramoto

Koichiro Tanaka

Akiharu Miyanaga

Masashi Tsubuku

Mitsuaki Osame

Hiroyuki Miyake

Hidekazu Miyairi

Takeshi Fukunaga

Masahiko Hayakawa

Satoshi Murakami

Masaaki Hiroki

Toshimitsu Konuma

Toshiji Hamatani

Hongyong Zhang

Yukinori Shima

Hideto Ohnuma

Masami Jintyou

Akira Mase

Junya Maruyama

Hideki Uochi

Toshinari Sasaki

Hiroki Ohara

Kei Takahashi

Takeshi Nishi

Yoshiaki Oikawa

Atsuo Isobe

Kosei Noda

Hiromichi Godo

Masahiro Takahashi

Naoto Kusumoto

Kensuke Yoshizumi

Setsuo Nakajima

Akihisa Shimomura

Takayuki Ikeda

Hisao Ikeda

Osamu Nakamura

Koji Kusunoki

Koji Dairiki

Yasuhiro Jinbo

Aya Anzai

Shinya Sasagawa

Hiroki Adachi

Tetsuhiro Tanaka

Tatsuya Honda

Daisuke Matsubayashi

Yoshiyuki Kurokawa

Yoshifumi Tanada

Shingo Eguchi

Koji Ono

Daisuke Kubota

Yuugo Goto

Tatsuya Arao

Yu Yamazaki

Nobuharu Ohsawa

Kouhei Toyotaka

Tatsuya Onuki

Takeshi Osada

Hideaki Shishido

Atsushi Umezaki

Motomu Kurata

Ryoji Nomura

Yasuo Nakamura

Kazunori Watanabe

Takanori Matsuzaki

Yutaka Shionoiri

Susumu Kawashima

Yuta Endo

Yukio Tanaka

Tomoaki Atsumi

Tetsuji Ishitani

Shuhei Nagatsuka

Junpei Momo

Ryota Tajima

Kunihiko Suzuki

Harue Osaka

Tetsuji Yamaguchi

Hideko Inoue

Satoko Shitagaki

Yoshiyuki Kobayashi

Munehiro Kozuma

Hidekazu Takahashi

Tsunenori Suzuki

Hiroyuki Ogawa

A novel display panel that is highly convenient or reliable is provided. The display panel includes a first region and a second region. The second region is provided with a first component, and the second region can be bent with the first component facing outward. The first component includes a first elastic body and a second elastic body. The second elastic body includes an end portion part or the whole of which is covered with the first elastic body. The second elastic body has a higher elastic modulus than the first elastic body.

Flexible display panel

A semiconductor device with a small variation in characteristics is provided. A semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and placed between the first conductor and the second conductor, a sixth insulator over the fifth insulator, and a third conductor over the sixth insulator. The third conductor includes a region overlapping the oxide. The fifth insulator includes a region in contact with the oxide, the first conductor, the second conductor, and each of the first insulator to the fourth insulator. The fifth insulator contains nitrogen, oxygen, and silicon.

Semiconductor device and method for manufacturing semiconductor device

A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.

Semiconductor device comprising conductive layers functioning as first and second gate electrodes of a transistor

An electronic device capable of measuring the blood flow speed in a retina blood vessel or the like of an eye is provided. The electronic device includes a display portion, a sending portion, a receiving portion, and a control circuit. The sending portion has a function of generating a first ultrasonic wave with a first frequency and a function of sending a first electric signal corresponding to the first frequency to the control circuit. The receiving portion has a function of receiving a second ultrasonic wave, which is the first ultrasonic wave reflected by an object, with a second frequency, a function of generating a second electric signal corresponding to the second frequency, and a function of sending the second electric signal to the control circuit. Note that the object is one or more selected from a retina blood vessel and a blood vessel included in a retina of a user's eye. The control circuit has a function of calculating the blood flow speed in one or more selected from the retina blood vessel and the blood vessel with the use of the first electric signal and the second electric signal and a function of sending a third electric signal corresponding to the blood flow speed to the display portion. The display portion has a function of receiving the third electric signal and displaying the blood flow speed.

Electronic device

The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Semiconductor device and manufacturing method thereof

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Integrated semiconductor with shared electrodes between capacitor and transistor

A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part of a surface of the stack. The third oxide semiconductor layer includes a first layer in contact with the stack and a second layer over the first layer. The first layer includes a microcrystalline layer, and the second layer includes a crystalline layer in which c-axes are aligned in a direction perpendicular to a surface of the first layer.

Semiconductor device

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor. The transistor includes a first conductor, a first insulator over the first conductor, an oxide provided with a groove portion over the first insulator, a second conductor and a third conductor disposed in a region that does not overlap with the groove portion in the oxide, a second insulator disposed between the second conductor and the third conductor and in the groove portion in the oxide, and a fourth conductor over the second insulator. A bottom surface of the fourth conductor is lower than a bottom surface of the second conductor and a bottom surface of the third conductor. In a cross-sectional view of the transistor in the channel length direction, an end portion of a bottom surface of the groove portion has a curvature.

Semiconductor device having a groove portion in an oxide layer of a transistor channel

A semiconductor device that has reduced power consumption and is capable of non-destructive reading is provided. The semiconductor device includes a first circuit including a first transistor and a first FTJ element, and a second circuit including a second transistor and a second FTJ element. A first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element, and a first terminal of the second transistor is electrically connected to an input terminal of the second FTJ element. A second terminal of the first transistor and a second terminal of the second transistor are electrically connected to a read circuit. In a data writing method, a voltage is applied between the input terminal and the output terminal of each of the first FTJ element and the second FTJ element to polarize the first FTJ element and the second FTJ element. In a data reading method, a differential current flowing through the first FTJ element and the second FTJ element is input to the read circuit.

Semiconductor device with first and second elements and electronic device

To provide a novel input/output panel that is highly convenient or reliable, a novel input/output device that is highly convenient or reliable, a novel input/output panel, a novel input/output device, or a novel semiconductor device. The input/output panel includes a pixel, a sensor element, a signal line, a control line, and a scan line. The sensor element has a region overlapping with the pixel. The signal line is electrically connected to the sensor element and the pixel. The control line is electrically connected to the sensor element. The scan line is electrically connected to the pixel.

Input/output panel and input/output device

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

Oxide material and semiconductor device

A secondary battery with excellent cycle performance is provided. The secondary battery is an all-solid-state battery including a positive electrode current collector layer, a base film, a positive electrode active material layer, a buffer layer, and a solid electrolyte layer. The base film contains titanium nitride. The positive electrode active material layer contains lithium cobalt oxide. The buffer layer contains titanium oxide. The solid electrolyte layer contains a titanium compound. By using titanium oxide for the buffer layer, a side reaction between the positive electrode active material layer and the solid electrolyte layer can be suppressed, and cycle performance can be improved.

Secondary battery and manufacturing method thereof

A semiconductor device that is suitable for miniaturization and higher density is provided. A semiconductor device includes a first transistor over a semiconductor substrate, a second transistor including an oxide semiconductor over the first transistor, and a capacitor over the second transistor. The capacitor includes a first conductor, a second conductor, and an insulator. The second conductor covers a side surface of the first conductor with an insulator provided therebetween.

A novel semiconductor device is provided. A component extending in a first direction, and a first conductor and a second conductor extending in a second direction are provided. The component includes a third conductor, a first insulator, a first semiconductor, and a second insulator. In a first intersection portion of the component and the first conductor, the first insulator, the first semiconductor, the second insulator, a second semiconductor, and a third insulator are provided concentrically. In a second intersection portion of the component and the second conductor, the first insulator, the first semiconductor, the second insulator, a fourth conductor, and a fourth insulator are provided concentrically around the third conductor.

Semiconductor device and electronic device

Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.

Semiconductor device comprising first and second conductive layers

Growing community of inventors

Tokyo, Japan

Shunpei Yamazaki