Semiconductor Energy Laboratory Co., Ltd.

Other

Sharp Kabushiki Kaisha Corporation

Ricoh Company, Ltd.

Eastman-kodak Company

Takasago International Corporation

Shunpei Yamazaki

Jun Koyama

Yasuyuki Arai

Yoshiharu Hirakata

Toru Takayama

Hisashi Ohtani

Junichiro Sakata

Hajime Kimura

Yasuhiko Takemura

Satoshi Seo

Kengo Akimoto

Junichi Koezuka

Hideaki Kuwabara

Kenichi Okazaki

Masayuki Sakakura

Kiyoshi Kato

Hideomi Suzawa

Satoshi Teramoto

Koichiro Tanaka

Akiharu Miyanaga

Masashi Tsubuku

Mitsuaki Osame

Hiroyuki Miyake

Hidekazu Miyairi

Takeshi Fukunaga

Masahiko Hayakawa

Satoshi Murakami

Masaaki Hiroki

Toshimitsu Konuma

Toshiji Hamatani

Hongyong Zhang

Yukinori Shima

Hideto Ohnuma

Masami Jintyou

Akira Mase

Junya Maruyama

Hideki Uochi

Toshinari Sasaki

Hiroki Ohara

Kei Takahashi

Takeshi Nishi

Yoshiaki Oikawa

Atsuo Isobe

Kosei Noda

Hiromichi Godo

Masahiro Takahashi

Naoto Kusumoto

Takayuki Ikeda

Kensuke Yoshizumi

Setsuo Nakajima

Akihisa Shimomura

Hisao Ikeda

Koji Kusunoki

Osamu Nakamura

Koji Dairiki

Shinya Sasagawa

Yasuhiro Jinbo

Aya Anzai

Daisuke Matsubayashi

Hiroki Adachi

Tetsuhiro Tanaka

Tatsuya Honda

Yoshiyuki Kurokawa

Yoshifumi Tanada

Shingo Eguchi

Daisuke Kubota

Koji Ono

Yuugo Goto

Tatsuya Onuki

Tatsuya Arao

Yu Yamazaki

Nobuharu Ohsawa

Kouhei Toyotaka

Takeshi Osada

Hideaki Shishido

Atsushi Umezaki

Motomu Kurata

Ryoji Nomura

Takanori Matsuzaki

Yasuo Nakamura

Kazunori Watanabe

Yutaka Shionoiri

Susumu Kawashima

Yuta Endo

Yukio Tanaka

Shuhei Nagatsuka

Tomoaki Atsumi

Tetsuji Ishitani

Junpei Momo

Ryota Tajima

Kunihiko Suzuki

Harue Osaka

Tetsuji Yamaguchi

Hideko Inoue

Satoko Shitagaki

Yoshiyuki Kobayashi

Munehiro Kozuma

Hidekazu Takahashi

Tsunenori Suzuki

Hiroyuki Ogawa

A novel display apparatus is provided. The display apparatus includes a first layer and a second layer over the first layer. The first layer includes a functional circuit. The second layer includes a display unit including a plurality of pixels and a memory unit including a plurality of memory cells. Each of the plurality of pixels includes a pixel circuit and a light-emitting element over the pixel circuit. The functional circuit includes a display unit driver circuit and a control circuit. The memory unit has a function of storing image data that is to be output through the display unit driver circuit to the display unit. The memory cell includes a first transistor for retaining a potential corresponding to the image data, and a second transistor for reading the potential. The first transistor is provided in the second layer, and the second transistor is provided in the first layer.

Display apparatus

One embodiment of the present invention provides a highly reliable display device. In particular, a display device to which a signal or a power supply potential can be supplied stably is provided. Further, a bendable display device to which a signal or a power supply potential can be supplied stably is provided. The display device includes, over a flexible substrate, a display portion, a plurality of connection terminals to which a signal from an outside can be input, and a plurality of wirings. One of the plurality of wirings electrically connects one of the plurality of connection terminals to the display portion. The one of the plurality of wirings includes a first portion including a plurality of separate lines and a second portion in which the plurality of lines converge.

Display device

A lightweight, foldable electronic device with an input function is provided. The electronic device is provided with a foldable display apparatus; the display apparatus has an input function, an authentication function, and the like, and is capable of operating the electronic device with or without contact. The display apparatus includes a light-emitting device and a light-receiving device in a display portion. The light-emitting device has a function of performing display. The light-emitting device may also have a light-emitting function for aiding input operation. The light-receiving device has an imaging function and a function of a sensor for performing input operation.

Electronic device and authentication method of electronic device

A small-sized and highly functional imaging device is provided. The imaging device includes a photoelectric conversion device formed on a silicon substrate and a transistor including a channel formation region in a silicon epitaxial growth layer formed on the silicon substrate. The transistor provided in the epitaxial growth layer has favorable electrical characteristics, so that the imaging device with little noise can be formed. Since the transistor can be formed so as to have a region overlapping with the photoelectric conversion device, the imaging device can be downsized.

Imaging device, electronic device, and moving object

The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

Semiconductor device, manufacturing method thereof, and electronic device

A semiconductor device having high reliability is provided. The semiconductor device includes a transistor and an insulator placed so as to surround the transistor; the insulator has a barrier property against hydrogen; the transistor includes an oxide and a conductor, the conductor includes nitrogen and a metal; the conductor has a physical property of extracting hydrogen; the conductor includes a region having a hydrogen concentration higher than or equal to 2.0×10atoms/cmand lower than or equal to 1.0×10atoms/cm; and at least part of hydrogen atoms included in the region is bonded to a nitrogen atom.

Semiconductor device and method for manufacturing semiconductor device

An electronic device having an authentication method with a high security level is provided. The electronic device includes a pixel portion, a sensor portion, an authentication portion, and a housing. The pixel portion includes a display element and a light-receiving element. The pixel portion has a function of turning on the display element. The pixel portion has a function of obtaining authentication information by capturing an image of a target object touching the pixel portion. The sensor portion has a function of detecting attachment or detachment to a living body or an object. The authentication portion has a function of performing authentication processing with the use of the authentication information. The housing includes a first surface and a second surface opposite to the first surface. The pixel portion is positioned on the first surface and the sensor portion is positioned on the second surface.

Electronic device and authentication method for electronic device

A computer system with a small circuit area and reduced power consumption is used. The computer system includes a computer node including a processor and a three-dimensional NAND memory device. The three-dimensional NAND memory device includes a first string and a second string in different blocks. The first string includes a first memory cell, and the second string includes a second memory cell. On reception of first data and a signal including an instruction to write the first data, the controller writes the first data to the first memory cell. Then, the controller reads the first data from the first memory cell and writes the first data to the second memory cell. Thus, the computer node can eliminate a main memory such as a DRAM from the structure.

Computer system using 3D OS NAND

A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators. The first insulator, the second insulator, the fifth insulator, and the ninth insulator are each a metal oxide having an amorphous structure.

Semiconductor device and manufacturing method thereof

As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

Semiconductor device and method for manufacturing the same

A ferroelectric device () that includes a metal nitride film () with favorable ferroelectricity is provided. The ferroelectric device comprises a first conductor (), a metal nitride film over the first conductor, a second conductor () over the metal nitride film, a first insulator () over the second conductor, and a second insulator () over the first insulator. The first insulator includes regions in contact with the side surface of the metal nitride film and the side surface and the top surface of the second conductor; the metal nitride film has ferroelectricity; the metal nitride film contains a first element, a second element, and nitrogen; the first element is one or more elements selected from Group 13 elements; the second element is one or more elements selected from Group 2 elements to Group 6 elements and Group 13 elements other than the first element; the first conductor and the second conductor each contain nitrogen; the first insulator contains aluminum and oxygen; and the second insulator contains silicon and nitrogen.

Ferroelectric device and semiconductor device

A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.

Semiconductor device including metal oxide

A novel display device is provided. The display device includes a plurality of pixels each including a light-emitting device, a sensor device, a first circuit device, and a second circuit device. The light-emitting device and the sensor device are provided in a first layer. The first circuit device is provided in a second layer. The second circuit device is provided in a third layer. The light-emitting device includes a lower electrode, an upper electrode, and a light-emitting layer provided between the lower electrode and the upper electrode. The sensor device has a function of detecting light emitted from the light-emitting device. The first circuit device has a function of driving the light-emitting device or the sensor device. The second circuit device has a function of performing an arithmetic operation based on information output from the first circuit device. The first layer is provided over the second layer. The second layer is provided over the third layer.

Display device with light emitting device and light sensing device in one layer

A memory device occupying a small area is provided. In a memory cell including a reading transistor, a writing transistor, and a capacitor, the writing transistor is provided above the reading transistor. Alternatively, the reading transistor is provided above the writing transistor. An oxide semiconductor is used for a semiconductor layer where a channel of the writing transistor is formed. An oxide semiconductor is used for a semiconductor layer where a channel of the reading transistor is formed. Memory cells are arranged in a matrix.

Memory cell and memory device

An authentication system for an electronic device with a high security level is provided. The authentication system includes a data retention means that accumulates first data related to a state of the electronic device being used by a first user registered in advance and generates a first data group, a first authentication means that authenticates a second user operating the electronic device as the first user and releases a locked state, a data acquisition means that acquires second data related to a state of the electronic device being used by the second user in a state where the locked state is released, and a second authentication means that authenticates the second user as the first user on the basis of the first data group and the second data and sets the electronic device to the locked state when the second user is not authenticated. The data retention means has a function of deleting the oldest first data of the plurality of pieces of the first data included in the first data group.

Authentication system for electronic device

Growing community of inventors

Tokyo, Japan

Shunpei Yamazaki