Semiconductor Energy Laboratory Co., Ltd.

Other

Sharp Kabushiki Kaisha Corporation

Ricoh Company, Ltd.

Eastman-kodak Company

Takasago International Corporation

Shunpei Yamazaki

Jun Koyama

Yasuyuki Arai

Yoshiharu Hirakata

Toru Takayama

Hisashi Ohtani

Junichiro Sakata

Yasuhiko Takemura

Hajime Kimura

Satoshi Seo

Kengo Akimoto

Junichi Koezuka

Hideaki Kuwabara

Kenichi Okazaki

Masayuki Sakakura

Kiyoshi Kato

Hideomi Suzawa

Satoshi Teramoto

Koichiro Tanaka

Akiharu Miyanaga

Masashi Tsubuku

Mitsuaki Osame

Hiroyuki Miyake

Hidekazu Miyairi

Takeshi Fukunaga

Masahiko Hayakawa

Satoshi Murakami

Masaaki Hiroki

Toshimitsu Konuma

Toshiji Hamatani

Hongyong Zhang

Yukinori Shima

Hideto Ohnuma

Masami Jintyou

Akira Mase

Junya Maruyama

Hideki Uochi

Toshinari Sasaki

Hiroki Ohara

Kei Takahashi

Takeshi Nishi

Yoshiaki Oikawa

Atsuo Isobe

Kosei Noda

Hiromichi Godo

Masahiro Takahashi

Naoto Kusumoto

Kensuke Yoshizumi

Setsuo Nakajima

Akihisa Shimomura

Takayuki Ikeda

Hisao Ikeda

Osamu Nakamura

Koji Kusunoki

Koji Dairiki

Yasuhiro Jinbo

Aya Anzai

Shinya Sasagawa

Daisuke Matsubayashi

Hiroki Adachi

Tetsuhiro Tanaka

Tatsuya Honda

Yoshiyuki Kurokawa

Yoshifumi Tanada

Shingo Eguchi

Koji Ono

Daisuke Kubota

Yuugo Goto

Tatsuya Arao

Yu Yamazaki

Tatsuya Onuki

Nobuharu Ohsawa

Kouhei Toyotaka

Takeshi Osada

Hideaki Shishido

Atsushi Umezaki

Motomu Kurata

Ryoji Nomura

Yasuo Nakamura

Kazunori Watanabe

Takanori Matsuzaki

Yutaka Shionoiri

Susumu Kawashima

Yuta Endo

Yukio Tanaka

Shuhei Nagatsuka

Tomoaki Atsumi

Tetsuji Ishitani

Junpei Momo

Ryota Tajima

Kunihiko Suzuki

Harue Osaka

Tetsuji Yamaguchi

Hideko Inoue

Satoko Shitagaki

Yoshiyuki Kobayashi

Munehiro Kozuma

Hidekazu Takahashi

Tsunenori Suzuki

Hiroyuki Ogawa

A semiconductor device having a novel structure is provided. The semiconductor device includes a p-channel transistor and an n-channel transistor provided over a silicon substrate. One of a source and a drain of the p-channel transistor is electrically connected to a first power supply line, one of a source and a drain of the n-channel transistor is electrically connected to a second power supply line, and the other of the source and the drain of the p-channel transistor is connected to the other of the source and the drain of the n-channel transistor. The p-channel transistor includes a first gate electrode and a first back gate electrode provided to face the first gate electrode with a first channel formation region therebetween. The first back gate electrode is formed using a region where an impurity element imparting conductivity is selectively introduced to the silicon substrate. The n-channel transistor is provided above a layer including the p-channel transistor.

Semiconductor device

A multifunctional imaging device is provided. The imaging device includes first to fourth light-receiving elements and first and second functional layers. The first to fourth light-receiving elements are photoelectric conversion elements having sensitivity to light of different wavelengths from each other. The first and second functional layers each include first and second transistors. The first functional layer and the fourth to first light-receiving elements are stacked in this order over the second functional layer. In each of the first to fourth light-receiving elements, a first conductive layer, a first buffer layer, a photoelectric conversion layer, a second buffer layer, and a second conductive layer are stacked in this order. The photoelectric conversion layer includes an organic compound, and the first buffer layer and the second buffer layer each include a metal or an organic compound. The first transistor is electrically connected to the first conductive layer of any of the first to fourth light-receiving elements. The second transistor is electrically connected to the first transistor.

Imaging device

An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.

To provide a semiconductor device with a novel structure. The semiconductor device includes an accelerator. The accelerator includes a first memory circuit, a second memory circuit, and an arithmetic circuit. The first memory circuit includes a first transistor. The second memory circuit includes a second transistor. Each of the first transistor and the second transistor includes a semiconductor layer including a metal oxide in a channel formation region. The arithmetic circuit includes a third transistor. The third transistor includes a semiconductor layer including silicon in a channel formation region. The first transistor and the second transistor are provided in different layers. The layer including the first transistor is provided over a layer including the third transistor. The layer including the second transistor is provided over the layer including the first transistor. The data retention characteristics of the first memory circuit are different from those of the second memory circuit.

A transistor in which a short-channel effect is not substantially caused and which has switching characteristics even in the case where the channel length is short is provided. Further, a highly integrated semiconductor device including the transistor is provided. A short-channel effect which is caused in a transistor including silicon is not substantially caused in the transistor including an oxide semiconductor film. The channel length of the transistor including the oxide semiconductor film is greater than or equal to 5 nm and less than 60 nm, and the channel width thereof is greater than or equal to 5 nm and less than 200 nm. At this time, the channel width is made 0.5 to 10 times as large as the channel length.

A semiconductor device having a novel structure is provided. The semiconductor device includes a first element layer including a first memory cell, a second element layer including a second memory cell, and a silicon substrate including a driver circuit. The first element layer is provided between the silicon substrate and the second element layer. The first memory cell includes a first transistor and a first capacitor. The second memory cell includes a second transistor and a second capacitor. One of a source and a drain of the first transistor and one of a source and a drain of the second transistor are each electrically connected to a wiring for electrical connection to the driver circuit. The wiring is in contact with a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor and is provided in a direction perpendicular or substantially perpendicular to a surface of the silicon substrate.

Semiconductor device and electronic device having stacked element layers on driver-circuit substrate

A semiconductor device that can operate at high speed or having high strength against stress is provided. One embodiment of the present invention is a semiconductor device including a semiconductor film including a channel formation region and a pair of impurity regions between which the channel formation region is positioned; a gate electrode overlapping side and top portions of the channel formation region with an insulating film positioned between the gate electrode and the side and top portions; and a source electrode and a drain electrode in contact with side and top portions of the pair of impurity regions.

Semiconductor device having light-emitting element

A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.

Electronic device including a circuit storing a signal

A novel display panel that is highly convenient or reliable is provided. The display panel includes a first region and a second region. The second region is provided with a first component, and the second region can be bent with the first component facing outward. The first component includes a first elastic body and a second elastic body. The second elastic body includes an end portion part or the whole of which is covered with the first elastic body. The second elastic body has a higher elastic modulus than the first elastic body.

Flexible display panel

A semiconductor device with a small variation in characteristics is provided. A semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and placed between the first conductor and the second conductor, a sixth insulator over the fifth insulator, and a third conductor over the sixth insulator. The third conductor includes a region overlapping the oxide. The fifth insulator includes a region in contact with the oxide, the first conductor, the second conductor, and each of the first insulator to the fourth insulator. The fifth insulator contains nitrogen, oxygen, and silicon.

Semiconductor device and method for manufacturing semiconductor device

A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.

Semiconductor device comprising conductive layers functioning as first and second gate electrodes of a transistor

An electronic device capable of measuring the blood flow speed in a retina blood vessel or the like of an eye is provided. The electronic device includes a display portion, a sending portion, a receiving portion, and a control circuit. The sending portion has a function of generating a first ultrasonic wave with a first frequency and a function of sending a first electric signal corresponding to the first frequency to the control circuit. The receiving portion has a function of receiving a second ultrasonic wave, which is the first ultrasonic wave reflected by an object, with a second frequency, a function of generating a second electric signal corresponding to the second frequency, and a function of sending the second electric signal to the control circuit. Note that the object is one or more selected from a retina blood vessel and a blood vessel included in a retina of a user's eye. The control circuit has a function of calculating the blood flow speed in one or more selected from the retina blood vessel and the blood vessel with the use of the first electric signal and the second electric signal and a function of sending a third electric signal corresponding to the blood flow speed to the display portion. The display portion has a function of receiving the third electric signal and displaying the blood flow speed.

Electronic device

The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Semiconductor device and manufacturing method thereof

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Integrated semiconductor with shared electrodes between capacitor and transistor

Growing community of inventors

Tokyo, Japan

Shunpei Yamazaki