Kabushiki Kaisha Toshiba

Shunko Magoshi

Shinji Sato

Ryoichi Inanami

Katsuya Okumura

Atsushi Ando

Kazuyoshi Sugihara

Tetsuro Nakasugi

Ikuo Yoneda

Hiromi Niiyama

Masamitsu Itoh

Yumi Watanabe

Toru Shibata

Yosimitu Kato

Soichi Inoue

Yuichiro Yamazaki

Tatsuya Ohguro

Motosuke Miyoshi

Shouhei Kousai

Tatsuhiko Higashiki

Kiyoshi Hattori

Hiroyuki Mizuno

Mariko Takayanagi

Takumi Ota

Takeshi Koshiba

Noriaki Sasaki

Kazuo Tawarayama

According to the present invention, there is provided a semiconductor device fabrication method comprising, bringing a mold having a predetermined pattern into contact with at least a portion of an imprinting material formed on a substrate to be processed, and forming the pattern on the substrate to be processed by sequentially transferring the pattern for each shot, wherein one of a dicing region and a monitor pattern formation region of the substrate to be processed is coated with the imprinting material.

Semiconductor device fabrication method and pattern formation mold

According to an aspect of the present invention, there is provided a method for forming a pattern including: applying a photosensitive resin onto a film on a wafer substrate; partly exposing the photosensitive resin to light and developing the photosensitive resin to form a first pattern having an opening portion; applying a photo-curable material onto the film exposed by the opening portion of the first pattern; bringing one face of an optically-transmissive template having a second pattern formed on the one face into contact with the photo-curable material, the second pattern including projections and reentrants; irradiating the photo-curable material with light; and separating the template from the photo-curable material.

Method for forming pattern and method for manufacturing semiconductor device

According to an aspect of the invention, there is provided an electron beam drawing apparatus comprising at least one stage of a deflection amplifier and a deflection unit, a first storage section which stores shot information at a drawing time, a second storage section which stores a correction table indicating a relation between the shot information and an output voltage of the deflection amplifier, and an adjusting section which adjusts an output of the deflection amplifier based on the correction table stored in the second storage section and the shot information stored in the first storage section.

Electron beam drawing apparatus, deflection amplifier, deflection control device, electron beam drawing method, method of manufacturing semiconductor device, and electron beam drawing program

A exposure apparatus includes a charged beam radiating unit configured to radiate a charged beam, a shaping unit including an opening for shaping the beam, a storage unit to store a history of data concerning a beam area of the beam on the shaping unit, a predicting unit to predict change amount of dimensions of the beam passing through the opening to design dimensions of the opening, the predicting the change amount being carried out based on a relation between the beam area previously prepared and change amount of the dimensions of the beam passing through the opening to the design dimensions of the opening, and a correcting unit to correct dimension of a pattern which corresponds to the beam and is to be formed on the sample based on the change amount predicted by the predicting unit.

Charged beam exposure apparatus and method for manufacturing mask and semiconductor device

Provided is a charged particle beam exposure method placing an mask having openings in an exposure apparatus that including a deflector which deflects a charged particle beam on the mask, applying a first voltage to the deflector, the first voltage deflects the beam at an first opening, sequentially exposing all the character patterns which can be exposed by the beam shaped by the first opening after a stabilization time set as a function of a voltage has elapsed after applying the first voltage, applying a second voltage to the deflector after all the character patterns have been exposed by the beam shaped by the first opening, the second voltage deflects the beam at a next opening, and exposing all the character patterns which can be exposed by the beam shaped by the next opening after the stabilization time has elapsed after applying the second voltage.

Charged particle beam exposure method and method for producing charged particle beam exposure data

A user is requested to input specifications of a semiconductor device. Based on the specifications, a plurality of circuit patterns are generated by a CP method, and a design parameter is calculated for each of the circuit patterns. The user is provided with information of the plurality of circuit patterns together with the design parameters. The user selects a desired circuit pattern, whereas the server calculates manufacturing costs of the device and presents them to the user. The user checks the costs and then places an order.

Method and system for producing semiconductor devices

A method for correcting a proximity effect applied to a dose of an electron beam exposure, includes classifying an underlying pattern of a level underlying a thin film layer; dividing a processing pattern to be transferred on the thin film layer into a first pattern overlapping with the underlying pattern and a second pattern which does not overlap with the underlying pattern according to the classified underlying pattern; calculating a pattern area density for the first and second patterns in a unit region; and calculating a corrected dose for the processing pattern according to the pattern area density.

Method for correcting a proximity effect, an exposure method, a manufacturing method of a semiconductor device and a proximity correction module

A charged particle beam exposure method for shaping a charged particle beam by using an aperture mask having character apertures corresponding to the character shapes extracted from a semiconductor device pattern, the method comprises arranging the character apertures in the aperture mask, each of the character apertures having a shape corresponding to character shapes extracted from a standard cell pattern used for designing a semiconductor device, and varying the shape of the charged particle beam according to the outer shape of each of the character apertures, thereby applying the shaped charged particle beam to the character apertures.

Charged particle beam exposure system using aperture mask in semiconductor manufacture

A method divides a layout area of an electronic part into sections, designs patterns according to circuit data of de electronic part, and draws the patterns in the layout area section by section so that the patterns in the sections may collectively form the electronic part. The method detects, among the patterns, any violation pattern that may cause a characteristic failure in the electronic part due to a section-to section connection error. Such violation pattern has a size L smaller than a threshold &ldquo;k*La&rdquo; where La is a section-to-section connection allowance and k is a coefficient. Also provided is an apparatus for executing the method.

Apparatus for and method of preparing pattern data of electronic part

In a circuit pattern design method which uses a plurality of standard cells that optimize circuit patterns for function units on the basis of a logic description which describes circuit operation of a semiconductor device, and which method generates a circuit pattern corresponding to charged-particle beam exposure using both a character projection exposure method and a variable shaped beam exposure method, the circuit pattern satisfies a design constraint condition, and a predetermined condition imposed on transfer to a sample or imposed on an aperture mask used in exposure by the character projection exposure method.

Circuit pattern design method, circuit pattern design system, and recording medium

Using the hierarchy cell , cell , cell , cell of the figure cells in the design pattern data, it is not necessary to take the actual forms of patterns and the arrangement information of data (relation between patterns, period of arrangement) into consideration, and therefore, characters for CP exposure can be extracted effectively.

Method of extracting characters and computer-readable recording medium

In an electron beam drawing apparatus including an objective lens for focusing an electron beam emitted from an electron gun on a sample surface and an objective deflector for controlling the position of the electron beam on the sample surface, an objective driving mechanism for mechanically moving the objective lens and objective deflector in a plane perpendicular to the optical axis of the electron beam is provided and an optical axis shifting deflector arranged nearer to the electron gun than the objective lens and objective deflector, for deflecting the electron beam in synchronism with the operation of the objective lens and objective deflector is provided.

Charged beam drawing apparatus

A charged-particle beam exposure system includes a charged-particle beam exposure apparatus for forming a pattern on a sample by charged-particle beam exposure using both a character projection exposure method and a variable shaped beam exposure method, a standard cell library which stores information of a plurality of standard cells that optimize circuit patterns for function units, an aperture mask which is set in the charged-particle beam exposure apparatus, bears characters corresponding to the standard cells, and has an aperture block falling within the irradiation range of the charged-particle beam exposure apparatus, a CP aperture mask management table which stores an index unique to each aperture block that is formed on the aperture mask and bears the characters corresponding to the standard cells, information of the standard cells corresponding to the characters laid out on each aperture block, and the number of charged-particle beam shots necessary to expose all the characters corresponding to the standard cells by the character projection exposure method, and a design unit for designing a layout by looking up the standard cell library and the CP aperture mask management table.

Circuit pattern design method, exposure method, charged-particle beam exposure system

A method for forming patterns, in which pattern transfer to the same photosensitive material on a first layer is carried out using both light exposure and charged particle beam exposure, comprises the steps of performing a predetermined geometric operation between data associated with a pattern to be transferred to the first layer and data associated with a pattern to be transferred to a second layer different from the first layer, separating the pattern data associated with the pattern to be transferred to the first layer into first exposure pattern data for charged particle beam exposure and second exposure pattern data for light exposure, and performing pattern transfer on to the first layer based on the result of the separation.

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Yokohama, Japan

Shunko Magoshi