Kabushiki Kaisha Toshiba

Shunji Yoshitake

Yasuhiko Akaike

Kazuyoshi Furukawa

Koichi Takahashi

Atsuko Yamashita

Kenichi Ohashi

Koji Asakawa

Akira Fujimoto

Toshiyuki Terada

Shinji Nunotani

Hitoshi Sugiyama

Akira Tanaka

Hideki Sekiguchi

Shoichi Washizuka

Katsumi Egashira

Kazuhiro Takimoto

Provided is a laminate containing a first compound semiconductor layer; and a second compound semiconductor layer integrally bonded to the first compound semiconductor layer via a bonding layer. A plane A is in the second compound semiconductor layer bonded to a surface where a plane B is in the first compound semiconductor layer, or a surface where a plane B is in the second compound semiconductor layer bonded to a surface where a plane A in the first compound semiconductor layer. The impurity concentration of the bonding layer is 2&#xd7;10cmor more.

Process for preparing a bonding type semiconductor substrate

The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula In(GaAl)P on a GaAs substrateto form an epi-wafer having an n-type cladding layer(0.45&#x3c;x&#x3c;0.50, 0&#x2266;y&#x2266;1), an active layer, a p-type cladding layerand a cover layer; a step of removing the cover layerby etching to expose the surface of the p-type cladding layer; a step of integrally joining a mirror-finished GaP substrateon the p-type cladding layerby placing the GaP substrate on the cladding layer at room temperature so that the mirror-finished surface of the GaP substrate may come into contact with the p-type cladding layer; a step of subjecting the resultant laminate to a heat treatment; a step of carrying out an etching treatment from the side of the GaAs substrateto expose the n-type cladding layer; and a step of forming electrodeson the surface of the n-type cladding layerand on the back surface of the GaP substrate, respectively.

There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

Method of manufacturing a semiconductor light-emitting element

A semiconductor laser includes a substrate, a double hetero structure portion formed on the substrate, the double hetero structure including a first clad layer formed on the substrate, an active layer formed on the first clad layer and a second clad layer formed on the active layer, the second clad layer having a stripe-form projection on an upper surface thereof, the projection having an upper portion whose sidewalls are substantially vertically formed on the surface of the substrate and a step-shaped lower portion whose line width is larger than that of the upper portion, and a current blocking layer formed extending from side surfaces of the projection to the upper surface of the second clad layer except an upper surface of the projection.

Semiconductor laser and manufacturing method thereof

A semiconductor light emitting device is disclosed in which a semiconductor multilayer structure including a light emitting layer is formed on a substrate and light is output from the opposite surface of the semiconductor multilayer structure from the substrate. The light output surface is formed with a large number of protrusions in the form of cones or pyramids. To increase the light output efficiency, the angle between the side of each protrusion and the light output surface is set to between 30 and 70 degrees.

Surface-emitting semiconductor light device

The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula In (Ga Al ) P on a GaAs substrate to form an epi-wafer having an n-type cladding layer (0.45<x<0.50, 0&lE;y&lE;1), an active layer a p-type cladding layer and a cover layer a step of removing the cover layer by etching to expose the surface of the p-type cladding layer a step of integrally joining a mirror-finished GaP substrate on the p-type cladding layer by placing the GaP substrate on the cladding layer at room temperature so that the mirror-finished surface of the GaP substrate may come into contact with the p-type cladding layer a step of subjecting the resultant laminate to a heat treatment; a step of carrying out an etching treatment from the side of the GaAs substrate to expose the n-type cladding layer and a step of forming electrodes on the surface of the n-type cladding layer and on the back surface of the GaP substrate respectively.

Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof

A semiconductor light emitting device is disclosed, which comprises a substrate, and a multi-layer semiconductor film formed on the substrate, the multi-layer semiconductor film including a plurality of semiconductor layers overlaid on the substrate, the semiconductor layers having a light emission layer for emitting a light, wherein the light is picked up at a first side of the multi-layer semiconductor film, which is a side opposite to the substrate, wherein a pattern having a light pickup surface is formed on a light emitting portion of the multi-layer semiconductor film, the light pickup surface is in a (111) plane or a plane in the vicinity of the (111) plane, and an unevenness is formed on the light pickup surface.

Semiconductor light emission device and manufacturing method thereof

The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula In (Ga Al ) P on a GaAs substrate to form an epi-wafer having an n-type cladding layer (0.45<x<0.50, 0&lE;y&lE;1), an active layer a p-type cladding layer and a cover layer a step of removing the cover layer by etching to expose the surface of the p-type cladding layer a step of integrally joining a mirror-polished GaP substrate on the p-type cladding layer by placing the GaP substrate on the cladding layer at room temperature so that the mirror-polished surface of the GaP substrate may come into contact with the p-type cladding layer a step of the subjecting the resultant laminate to a heat treatment; a step of carrying out an etching treatment from the side of the GaAs substrate to expose the n-type cladding layer and a step of forming electrodes on the surface of the n-type cladding layer and on the back surface of the GaP substrate respectively.

Growing community of inventors

Kawasaki, Japan

Shunji Yoshitake