Mitsubishi Gas Chemical, Inc.

Shunji Sasabe

Tetsuo Aoyama

Ryuji Hasemi

Ryuji Sotoaka

Hideto Gotoh

Hidetoshi Ikeda

Masayuki Kojima

Fukusaburo Ishihara

Tsuyoshi Matsui

Yoshikazu Ohira

Kazusato Hara

Takafumi Tokunaga

Kazuhisa Usuami

Yoshimi Torii

There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

Cleaning liquid for semiconductor devices

Growing community of inventors

Saitama-ken, Japan

Shunji Sasabe