Mitsubishi Electric Corporation

The Furukawa Electric Co., Ltd.

Shunji Masumori

Hidemichi Fujiwara

Kenichi Hayashi

Tomohiro Ishii

Seiji Oka

Hidetoshi Ishibashi

Masaki Goto

Hiroyuki Yoshihara

Takuya Harada

Toshiaki Asada

Hideo Nishikubo

Yurie Furuta

Ayumi Minamide

A test method of the present disclosure includes: applying a thermal grease on a support plate; placing a press plate such that the press plate faces the support plate with the thermal grease interposed between the press plate and the support plate; changing a distance between the support plate and the press plate; and observing a shape of the thermal grease after the distance between the support plate and the press plate is changed. The pumping-out performance is determined based on the shape of the thermal grease.

Test method and method for manufacturing semiconductor device

A power semiconductor apparatus includes a mold portion, a panel that is conductive and in a flat plate shape, and a plurality of fins. The mold portion includes a power semiconductor element and a base plate that are molded. An opening is formed in the panel into which the base plate is inserted. The plurality of fins is fixed in grooves of the base plate. The panel has a plurality of protrusions on side surfaces forming the opening. Each protrusion has a fifth surface a cross section of which has a shape that tapers down toward an end of the protrusion, the cross section being parallel to a plane extending in the Z direction and a direction in which the protrusion protrudes. The base plate has cover portions covering the fifth surfaces, and is plastically deformed to allow the panel to be fitted in the base plate to fill gaps.

Power semiconductor apparatus and method for manufacturing the same

A conductive connecting member formed on a bonded face of an electrode terminal of a semiconductor or an electrode terminal of a circuit board, the conductive connecting member comprising a porous body formed in such manner that a conductive paste containing metal fine particles (P) having mean primary particle diameter from 10 to 500 nm and an organic solvent (S), or a conductive paste containing the metal fine particles (P) and an organic dispersion medium (D) comprising the organic solvent (S) and an organic binder (R) is heating-treated so as for the metal fine particles (P) to be bonded, the porous body being formed by bonded metal fine particles (P) having mean primary particle diameter from 10 to 500 nm, a porosity thereof being from 5 to 35 volume %, and mean pore diameter being from 1 to 200 nm.

Conductive connecting member and manufacturing method of same

Providing the conductive paste for the material forming the conductive connecting member without disproportionately located holes (gaps), coarse voids, and cracks, which improves thermal cycle and is excellent in crack resistance and bonding strength. An conductive paste including metal fine particles (P) comprising metal fine particles (P1) of one or more than two kinds selected from metal and alloy thereof, having mean primary particle diameter from 1 to 150 nm, and metal fine particles (P2) of same metal as the metal fine particles (P1), having mean primary particle diameter from 1 to 10 &#x3bc;m, mixing ratio of (P1/P2) being from 80 to 95 mass % for P1 and from 20 to 5 mass % for P2 (a total of mass % being 100 mass %); and organic dispersion medium (D) comprising organic solvent (S), or organic solvent (S) and organic binder (B), mixing ratio (P/D) of the metal fine particles (P) and the organic dispersion medium (D) being from 50 to 85 mass % for P and from 50 to 15 mass % for D (a total of mass % being 100 mass %).

Electrically conductive paste, and electrically conducive connection member produced using the paste

Growing community of inventors

Tokyo, Japan

Shunji Masumori