Merck Patent Gmbh

Ridgefield Acuisition

Shunji Kawato

Tetsumasa Takaichi

Masato Suzuki

Masakazu Kobayashi

Hiroshi Yanagita

Tomohide Katayama

Yuki Ozaki

Yusuke Hama

Noboru Satake

Kazumichi Akashi

Hiroshi Hitokawa

Hironori Endo

Takayuki Sao

Taku Hirayama

[Problem to be Solved] To provide a bottom antireflective coating forming composition which can show high etching resistance and can be crosslinked even at a relatively low temperature. Further, to provide a resist pattern manufacturing method and a device manufacturing method using the same. [Solution] The bottom antireflective coating forming composition comprises: a polymer A comprising specific repeating units; a low molecular crosslinking agent having a molecular weight of 100 to 3,000; and a solvent. The resist pattern manufacturing method and the device manufacturing method using the same are also provided.

Bottom antireflective coating forming composition

[Problem] To provide a chemically amplified positive type photoresist composition capable of forming a pattern having an excellent cross-sectional shape, and a pattern forming method using the same. [Means for Solution] A chemically amplified positive type photoresist composition comprising (A) a polymer which reacts with an acid to increase its solubility in an alkaline aqueous solution, (B) an organic solvent, (C) a first photo acid generator containing a cation having no polar group, and (D) a second photoacid generator containing a cation having a polar group, and a pattern forming method using the same.

Chemically amplified positive type photoresist composition and pattern forming method using the same

The present invention relates to a photosensitive resin composition suitable for forming a thick film, which comprises (A) an alkali-soluble resin, (B) at least one plasticizer selected from a group consisting of an alkali-soluble vinyl resin and an acid-dissociable group containing vinyl resin, (C) an acid generator, and (D) an organic solvent.

Chemically amplified positive photoresist composition and pattern forming method using same

[Problem] To provide a composition for forming a coating layer having excellent gas barrier performance and a method of forming the coating layer. [Means for Solution] A composition for forming a coating film comprising a specific silicon compound which reacts with a polysilazane by exposure, a polysilazane and an organic solvent, and a method for forming a coating layer comprising coating the composition on a substrate and exposing.

Composition for forming coating film and method for forming coating film using same

[Problem] To provide a film forming composition and a method for preparing a film with which it is possible to form a film having excellent gas barrier performance. [Means for Solution] Disclosed is a film forming composition comprising: a polysiloxane that does not include a hydroxyl group or a carboxyl group; a polysilazane; and an organic solvent. Also disclosed is a method for preparing a film comprising: coating a substrate with said composition; and exposing the same to light.

Film-forming composition and film-forming method using same

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Kakegawa, Japan

Shunji Kawato