Hitachi Chemical Company, Ltd.

Asahi Glass Company, Limited

Shunichiro Uchimura

Hidetaka Sato

Jun Tanaka

Makoto Kaji

Hiroshi Suzuki

Daisuke Makino

Fumio Kataoka

Keiko Isoda

Issei Takemoto

Haruhiko Kikkawa

Minoru Sugiura

Ko Aosaki

Ikuo Matsukura

Isao Uchigasaki

Shunsuke Yokotsuka

Takenori Narita

Hiroyuki Morishima

Aya Serita

A polyimide precursor having repeating units of the formula:

Photosensitive polyimide precursor and its use for pattern formation

A polyimide precursor having repeating units of the formula: ##STR1## wherein R.sup.1 is a tetravalent organic group having 4 or more carbon atoms; R.sup.2 is a trivalent or tetravalent organic group having one or more aromatic rings; R.sup.3 is a monovalent organic group; A is a monovalent group showing acidity; and n is an integer of 1 or 2, is effective for preparing a highly sensitive negative-working photosensitive material developable with an alkaline aqueous solution in a short time with high resolution.

Photosensitve polymide precursor and its use for pattern formation

A low dielectric resin composition comprising the following components (a) and (b), and the dielectric constant of a coating film formed by this composition being at most 3:

Low dielectric resin composition

Insulating resin composition for a semiconductor device having a multilevel interconnection layers formed by the resin and having a superior planarizing capability relative to a lower interconnection layer is provided, which resin being a cured product of a polyamic acid ester oligomer obtained by reacting an aromatic diamine and/or a diaminosiloxane with an aromatic tetracarboxylic acid ester obtained by reacting an aromatic tetracarboxylic acid dianhydride with an alcohol or alcohol derivative.

Insulating resin composition and semiconductor device using the same

A composition of materials comprising a polyamide acid-silicone intermediate obtained by reacting (a) a diaminoamide compound of the formula: ##STR1## wherein Ar and Y are as defined in the specification, (b) a diaminosiloxane, (c) a diamine, and (d) an aromatic tetracarboxylic acid dianhydride can form a protective film used in a semiconductor device excellent in adhesive properties, heat resistance and preventing soft errors due to .alpha.-rays.

Compositions of materials for forming protective film in semiconductor

A polyimide-isoindroquinazolinedione-silicone copolymer resin produced by reacting (a) a diaminoamide, (b) a diaminosiloxane, (c) a diamine, and (d) a tetracarboxylic acid dianhydride to give a polyamide acid-silicone intermediate, which is then subjected to dehydration and ring closure, is excellent particularly in adhesiveness, moisture resistance, wear resistance and heat resistance. The polyamide acid-silicone intermediate is stable in the form of a varnish and usuable commercially as a raw material for the polyimide-isoindroquinazolinedione-silicone copolymer resin.

Intermediate, copolymer resin and production thereof

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Hitachi, Japan

Shunichiro Uchimura