Sony Corporation

Shunichi Urasaki

Keiji Mabuchi

A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup devicein which micro padsare formed on the wiring layer side and a signal processing chiphaving micro padsformed on the wiring layer at the positions corresponding to the micro padsof the MOS solid-state image pickup deviceare connected by micro bumps. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Semiconductor module, MOS type solid-state image pickup device, camera and manufacturing method of camera

A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device in which micro pads are formed on the wiring layer side and a signal processing chip having micro pads formed on the wiring layer at the positions corresponding to the micro pads of the MOS solid-state image pickup device are connected by micro bumps. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

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Kanagawa, Japan

Shunichi Urasaki