Ajinomoto Co., Ltd.

Covalent Materials Corporation

Toshiba Ceramics Co., Ltd.

Coorstek Kk

Covalent Material Corporation

Shunichi Suzuki

Kenzo Yokozeki

Masakazu Sugiyama

Jun Komiyama

Yoshihisa Abe

Norimasa Onishi

Akira Yoshida

Kunihiko Watanabe

Hiroshi Oishi

Kenichi Eriguchi

Seiichi Hara

Hiroyuki Nozaki

Shigeru Yamanaka

Hideo Nakanishi

Yasuhiro Takenaka

Kenichi Hashiguchi

Katsunori Kobayashi

Hideyuki Suzuki

Yasuaki Takakura

Toshiki Taba

Yuko Tanita

Isao Abe

Kiyoshi Miwa

Yuzuru Eto

Naoto Tonouchi

Yasuhiro Mihara

Tatsuki Kashiwagi

Jun Takakura

Yuki Imabayashi

Peter Henderson

Rie Takeshita

Takayuki Ito

Tsuyoshi Nakamatsu

Kazutaka Terashima

Hisashi Kawasaki

Sergey Vasilievich Smirnov

Veronika Aleksandrovna Kotliarova

Uno Tagami

Takane Katayama

Kenji Yamamoto

Shinji Kuroda

Hidehiko Kumagai

Natalia Nikolaevna Samsonova

Natalia Yurievna Rushkevich

Kiyoaki Misu

Ayako Sasahara

Eri Tabuchi

Junko Shinozaki

Hirotaka Hagihara

Shinya Wagatsuma

Maiko Mori

Atsuro Miyao

Naoko Tsuyoshi

Ryosuke Fudo

Tatyana Aleksandrovna Bachina

Fusako Oura

Kiyotaka Fujita

Noriko Nagamine

Masanori Yamaguchi

Hayato Ozawa

Olga Sergeevna Beznoschenko

Takakazu Mori

A mutant glutamate-cysteine ligase (GSHA) suitable for generating &#x3b3;-Glu-Val, and a method for producing &#x3b3;-Glu-Val-Gly using the same are provided. &#x3b3;-Glu-Val is produced by using a mutant GSHA having a specific mutation with Glu and Val as raw materials, and &#x3b3;-Glu-Val-Gly is further produced by using &#x3b3;-Glu-Val and Gly as raw materials. &#x3b3;-Glu-Val-Gly is produced by using a mutant GSHA having a specific mutation with Glu, Val, and Gly as raw materials.

Mutant glutamate-cysteine ligase and method for manufacturing gamma glutamyl-valyl-glycine

A method for producing &#x3b3;-Glu-Val-Gly comprising the step of reacting Val-Gly with a &#x3b3;-glutamyl group donor in the presence of a &#x3b3;-glutamyltransferase, a microorganism containing the enzyme, or a processed product thereof to generate &#x3b3;-Glu-Val-Gly, wherein the &#x3b3;-glutamyltransferase consists of a large subunit and a small subunit, and the small subunit has a specific mutation.

Method for producing gamma-glutamylvalylglycine or a salt thereof

Method for producing &#x3b3;-glutamylvalylglycine or a salt thereof

A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a Si substrate when forming a thick nitride semiconductor layer on the substrate. A nitride semiconductor substrateis prepared in such a manner that a buffer layerand a semiconductor active layereach comprising a group 13 nitride are stacked one by one on one principal plane of a Si single crystal substrate, the one principal plane has an offset angle of 0.1&#xb0; to 1&#xb0; or &#x2212;1&#xb0; to &#x2212;0.1&#xb0; with respect to a (111) plane, an average dopant concentration in a bulk is 1&#xd7;10to 1&#xd7;10cm, the Si single crystal substratehas a SiOfilm on the back, and the total thickness of the buffer layerand the semiconductor active layeris 4 to 10 &#x3bc;m.

Nitride semiconductor substrate

A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse. In a nitride semiconductor substratehaving a substratea buffer layerformed on one principal plane of the substratean intermediate layerformed on the buffer layeran electron transport layerformed on the intermediate layerand an electron supply layerformed on the electron transport layerthe intermediate layerhas a thickness of 200 nm to 1500 nm and a carbon concentration of 5&#xd7;10atoms/cmto 1&#xd7;10atoms/cmand is of AlGaN (0.05&#x2266;x&#x2266;0.24), and the electron transport layerhas a thickness of 5 nm to 200 nm and is of AlGaN (0&#x2266;y&#x2266;0.04).

Nitride semiconductor substrate and method of manufacturing the same

A nitride semiconductor substrate is provided in which leak current reduction and improvement in current collapse are effectively attained when using Si single crystal as a base substrate. The nitride semiconductor substrate is such that an active layer of a nitride semiconductor is formed on one principal plane of a Si single crystal substrate through a plurality of buffer layers made of a nitride, in the buffer layers, a carbon concentration of a layer which is in contact with at least the active layer is from 1&#xd7;10to 1&#xd7;10atoms/cm, a ratio of a screw dislocation density to the total dislocation density is from 0.15 to 0.3 in an interface region between the buffer layer and the active layer, and the total dislocation density in the interface region is 15&#xd7;10cmor less.

A method for manufacturing a product of a reaction catalyzed by a protein having 2-oxoglutarate-dependent enzyme activity such as (2S,3R,4S)-4-hydroxy-L-isoleucine or a salt thereof using a bacterium transformed with a DNA fragment containing a gene coding for a protein having 2-oxoglutarate-dependent enzyme activity such as L-isoleucine dioxygenase activity; and wherein said bacterium has the ability to produce a product such as (2S,3R,4S)-4-hydroxy-L-isoleucine.

Bacterium producing a product of a reaction catalyzed by a protein having 2-oxoglutarate-dependent enzyme activity and a method for manufacturing the product

It is an object of the present invention to provide a procedure for realizing inexpensive and simple production of 3-indole-pyruvic acid. A transformant is made using a polynucleotide having a specific nucleotide sequence encoding a protein having an oxidase activity, and oxidase is generated by culturing the transformant in a medium to accumulate the oxidase in the medium and/or the transformant. Further, tryptophan is converted into 3-indole-pyruvic acid in the presence of the transformant and/or a culture thereof to produce 3-indole-pyruvic acid.

Methods for making 3-indole-pyruvic acid from tryptophan using a tryptophan deaminase

The present invention provides a method of producing optically active amino acids from 5-substituted hydantoin by isolating a hydantoinase gene and an N-carbamyl-L-amino acid hydrolase gene involved in an ability to convert 5-substituted hydantoin or N-carbamylamino acid into optically active amino acids from a microorganism of the genushaving the above ability and by improving gene amplification and transcriptional and translational activities thereby preparing a recombinant wherein the amount of the desired enzymes produced is increased. The hydantoinase gene is, for example, a DNA encoding for a protein having a hydantoinase activity, which has the nucleotide sequence of SEQ ID NO:1. The N-carbamyl-L-amino acid hydrolase gene is, for example, a DNA encoding for a protein having an N-carbamyl-L-amino acid hydrolase activity, which has the nucleotide sequence of SEQ ID NO:3.

DNA encoding hydantoinase, DNA encoding N-carbamyl-L-amino acid hydrolase, recombinant DNA, transformed cell, method of producing protein, and method of producing optically active amino acid

Oxidase gene and method for producing 3-indole-pyruvic acid by utilizing the gene

The present invention describes a method for generating a serine derivative and an optically active isomer thereof by a convenient technique, and an enzyme and the like useful in the method. In the presence of the following protein (A) and/or (B) having an enzymatic activity, an &#x3b1;-amino acid is reacted with an aldehyde to form a serine derivative:

Method for producing serine derivative and protein used for the same

A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layerin which AlGaN single crystal layers (0.6&#x2266;X&#x2266;1.0)containing carbon from 1&#xd7;10atoms/cmto 1&#xd7;10atoms/cmand AlGaN single crystal layers (0.1&#x2266;y&#x2266;0.5) 22 containing carbon from 1&#xd7;10atoms/cmto 1&#xd7;10atoms/cmare alternately and repeatedly stacked in order, and a nitride active layerprovided with an electron transport layerhaving a carbon concentration of 5&#xd7;10atoms/cmor less and an electron supply layerare deposited on a Si single crystal substratein order. The carbon concentrations of the AlGaN single crystal layersand that of the AlGaN single crystal layersrespectively decrease from the substrateside towards the above-mentioned active layerside. In this way, the compound semiconductor substrate is produced.

Compound semiconductor substrate comprising a multilayer buffer layer

The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlGaN single crystal (0&#x3c;x&#x2266;1); a second buffer layer which is formed on the first buffer layer and is composed of a plurality of first unit layers each having a thickness of from 250 nm to 350 nm and constituted of an AlGaN single crystal (0&#x2266;y&#x3c;0.1) and a plurality of second unit layers each having a thickness of from 5 nm to 20 nm and constituted of an AlGaN single crystal (0.9&#x3c;z&#x2266;1), said pluralities of first and second unit layers having been alternately superposed; and a semiconductor device formation region which is formed on the second buffer layer and includes at least one nitride-based semiconductor single-crystal layer. The compound semiconductor substrate according to the invention is suitable for use in electronic devices such as HEMTs (high electron mobility transistors).

Compound semiconductor substrate having multiple buffer layers

The present invention provides genes that encode the N-acetyl-(R,S)-&#x3b2;-amino acid acylases. The N-acetyl-(R,S)-&#x3b2;-amino acid acylases were isolated and purified from bacterial cells and the nucleotide sequences were determined. A host, such as, was used to construct a high-expression system for these genes. The N-acetyl-(R)-&#x3b2;-amino acid acylase produced bysp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 8. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence as shown in SEQ. ID. NO. 7. The N-acetyl-(S)-&#x3b2;-amino acid acylase produced bysp. AJ110349 (FERM BP-10366) includes, for example, the protein having the amino acid sequence shown in SEQ. ID. NO. 10. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence shown inshown in SEQ. ID. NO. 9. The N-acetyl-(R)-&#x3b2;-amino acid acylase produced bysp. AJ110348 (FERM BP-10367) includes, for example, the protein comprised of the amino acid sequence shown in SEQ. ID. NO. 12. The gene encoding this enzyme includes, for example, the DNA having the nucleotide sequence shown inshown in SEQ. ID. NO. 11.

N-acetyl-(R,S)-beta-amino acid acylase gene

A novel protein which has an activity to transport hydantoin compounds is described, as well as a recombinant expressing this transporter protein. Fromstrain AJ3912, a novel gene was discovered to encode a protein which is able to transport hydantoin compounds. A recombinant with an excellent ability to uptake hydantoin compounds is obtained by introducing and expressing the novel gene, called mhp, using gene recombination techniques.

Transporter protein

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Kanagawa, Japan

Shunichi Suzuki