Sharp Kabushiki Kaisha Corporation

Semiconductor Energy Laboratory Co., Ltd.

Other

Shunichi Naka

Shunpei Yamazaki

Yoshiharu Hirakata

Takeshi Nishi

Hiroshi Hamada

Yoshihiro Mizuguchi

Shuhei Tuchimoto

Osamu Nakamura

Takashi Watanabe

Hiroshi Shibata

Tohru Ueda

The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor layer, to distribute crystal defects due to the aforementioned element implantation by uniform and suitable density in the semiconductor film, making recombination centers of carriers, to thereby suppress alight sensitivity without spoiling a high degree of carrier movement included in a crystalline semiconductor layer.

Semiconductor device and manufacture method thereof

A liquid crystal projector in which light is effectively used and an excellent picture can be obtained is provided. In the liquid crystal projector, dichroic mirrors arranged at different angles are used to separate white light into beams of light of three primary colors of R, G, and B, and the respective beams of light are incident on microlenses at different angles. The respective beams of light of the three primary colors are distributed by the microlenses to optical components corresponding to pixels, and highly collimated light beams can be obtained by the optical components. Since the highly collimated light beams are made incident on the pixels of the liquid crystal panel, the beams can be certainly made incident on desired pixels.

Liquid crystal projector

A liquid crystal projector in which light is effectively used and an excellent picture can be obtained is provided. In the liquid crystal projector, dichroic mirrors arranged at different angles are used to separate white light into beams of light of three primary colors of R, G, and B, and the respective beams of the light are incident on microlenses at different angles. The respective beams of light of the three primary colors are distributed by the microlenses to optical components corresponding to pixels, and highly collimated light beams can be obtained by the optical components. Since the highly collimated light beams are made incident on the pixels of the liquid crystal panel, the beams can be certainly made incident on desired pixels.

A solid-state imaging device of the invention is provided with a CCD-structured branching unit which selects one signal charge sensor having characteristics suitable for the conditions of use from among a plurality of signal charge sensors each having different characteristics and forms a signal charge transmission path leading from the horizontal CCD to the selected signal charge sensor. As a result, there is no need to switch over the external circuit of the solid-state imaging device according to the conditions of use, which makes it possible to hold down the cost and reduce the size of the external size.

Solid-state imaging device having multiple charge detectors

Growing community of inventors

Osaka, Japan

Shunichi Naka