Tanaka Kikinzoku Kogyo K.k.

Tanaka Kikinzoku K.k.

Shunichi Nabeya

Kazuharu Suzuki

Ryosuke Harada

Toshiyuki Shigetomi

Takayuki Sone

Masayuki Saito

Akiko Kumakura

Tatsutaka Aoyama

Rumi Kobayashi

Satoshi Miyazaki

Michihiro Yokoo

The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which a cyclopentadienyl and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, the chemical deposition raw material being represented by the following formula. In the following formula, the first transition metal (M) and the second transition metal (M) are mutually different. The number of cyclopentadienyls (L) is 1 or more and 2 or less, and to the cyclopentadienyl is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents Rto R. With the chemical deposition raw material of the present invention, a composite metal thin film or a composite metal compound thin film containing plural metals can be formed from a single raw material. 

Chemical deposition raw material including heterogeneous polynuclear complex and chemical deposition method using the chemical deposition raw material

An organoplatinum compound with the following formula for use as a raw material in the chemical deposition of platinum compound thin films. In the formula, n is 1 or more and 5 or less. Each of substituents R1 to R5 on the alkenyl amine is a hydrogen atom, an alkyl group or the like and has a carbon number of 4 or less. Each of alkyl anions R6 and R7 is an alkyl group having a carbon number of 1 or more and 3 or less. The vapor pressure of the organoplatinum compound is high enough to allow for the manufacturing of a platinum thin film at low temperature. It also has moderate thermal stability. 

Organoplatinum compound for use in the chemical deposition of platinum compound thin films

A heterogeneous polynuclear complex for use as a raw material in the chemical deposition of composite metal or composite metal thin films with the below formula. In the formula, Mand Mare mutually different transition metals, x is an integer of 0 or more and 2 or less, y is in integer of 1 or more and 2 or less, z is an integer of 1 or more and 10 or less, Rto Rare each one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less, and Ris a hydrogen atom, a carbonyl, an alkyl group with a carbon number of 1 or more and 7 or less, an allyl group or an allyl derivative. The heterogeneous polynuclear complex allows a composite metal thin film or a composite metal compound thin film containing a plurality of metals to be formed from a single raw material. 

Heterogeneous polynuclear complex for use in the chemical deposition of composite metal or metal compound thin films

The invention provides a raw material for chemical deposition having properties required for a CVD compound, that is, which has a high vapor pressure, can be formed into a film at low temperatures (about 250&#xb0; C. or less), and also has moderate thermal stability. The invention relates to a raw material for chemical deposition, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the raw material for chemical deposition including an organoruthenium compound represented by the following formula, in which a cyclohexadienyl group or a derivative thereof and a pentadienyl group or a derivative thereof are coordinated to ruthenium: 

Raw material for chemical deposition including organoruthenium compound, and chemical deposition method using the raw material for chemical deposition

The present invention relates to a raw material for chemical deposition shown in a formulae below and including an organoplatinum compound in which diimine containing two imines and an alkyl anion are coordinated to divalent platinum. In the formulae, each of substituents Rto Ron the diimine represents a hydrogen atom, an alkyl group or the like and has a carbon number of 5 or less. Each of alkyl anions Rand Ris an alkyl group having a carbon number of 1 or more and 3 or less. The raw material has high vapor pressure and low decomposition temperature, and thus it is possible to manufacture a platinum thin film at low temperature. 

Raw material for chemical deposition composed of organoplatinum compound, and chemical deposition method using the raw material for chemical deposition

A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, in which the nickel thin film is formed by use of a hydrocarbon-type nickel complex represented by a following formula as a raw material compound, which is a nickel complex in which a cyclopentadienyl group (Cp) or a derivative thereof and a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof are coordinated to nickel and an element other than carbon and hydrogen is not contained in the structure, use of hydrogen as a reaction gas, and use of a film formation pressure of 1 to 150 torr and a film formation temperature of 80 to 250&#xb0; C. as film formation conditions (In the formula, X represents a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof. Rto Rwhich are substituent groups of the cyclopentadienyl group represent CHand n represents an integer of 0 to 6).

Method for producing nickel thin film on a Si substrate by chemical vapor deposition method, and method for producing Ni silicide thin film on Si substrate

The present invention provides a chemical vapor deposition raw material, which has a low melting point, has heat stability such that no thermal decomposition occurs during vaporization, readily decomposes at low temperature during film-formation, and can stably form a nickel thin-film having fewer impurities. The present invention relates to a chemical vapor deposition raw material containing an organic nickel compound, in which a cyclopentadienyl group or a derivative thereof is coordinated to nickel, and a cycloalkenyl group having one allyl group or a derivative thereof is coordinated to the carbon skeleton of cycloalkyl. This raw material has a low melting point, proper heat stability and film-formation ability at low temperature. Further, due to a high vapor pressure, the raw material is suitable for a three-dimensional electrode material having a three-dimensional structure.

Chemical vapor deposition raw material containing organic nickel compound, and chemical vapor deposition method using the chemical vapor deposition raw material

A chemical vapor deposition raw material for producing a platinum thin film or a platinum compound thin film by a chemical vapor deposition method, wherein the chemical vapor deposition raw material includes an organoplatinum compound having cyclooctadiene and alkyl anions coordinated to divalent platinum, and the organoplatinum compound is represented by the following formula. Here, one in which Rand Rare any combination of propyl and methyl, propyl and ethyl, or ethyl and methyl is particularly preferred. wherein Rand Rare alkyl groups, and Rand Rare different; and a number of carbon atoms of Rand Ris 3 to 5 in total.

Chemical vapor deposition raw material comprising organoplatinum compound, and chemical vapor deposition method using the chemical vapor deposition raw material

The present invention is a method for recycling an organic ruthenium compound for chemical vapor deposition, wherein an unreacted organic ruthenium compound is extracted from a used raw material through a thin film formation process. The method includes the following steps (a) to (c). (a) A modification step in which the used raw material and a hydrogenation catalyst are brought into contact with each other in a hydrogen atmosphere, thereby hydrogenating an oxidized organic ruthenium compound in the used raw material. (b) An adsorption step in which the used raw material and an adsorbent are brought into contact with each other, thereby removing impurities in the used raw material. (c) A restoration step in which the used raw material is heated at a temperature that is not lower than &#x2212;100&#xb0; C. and not higher than &#x2212;10&#xb0; C. with respect to the decomposition temperature of the organic ruthenium compound for eight hours or more, thereby adjusting the ratio of the isomers of the organic ruthenium compound in the used raw material.

Method for recycling organic ruthenium compound for chemical vapor deposition

A chemical deposition method for producing a platinum thin film or a platinum compound thin film by chemical vapor deposition of an organoplatinum compound is represented by the following formula, which includes a divalent platinum atom, and hexadiene or a hexadiene derivative and alkyl anions coordinated to the divalent platinum atom. In the following formula, Rand Rare each an alkyl group, and may be different from each other. Rand Rare each a hydrogen atom or an alkyl group, and may be different from each other. The organoplatinum compound is satisfactory in stability and generates no toxic substance in film formation, and hence is satisfactory in handleability and excellent in practicability. The organoplatinum compound has a high vapor pressure, enables the film formation at a low temperature, and is useful as a CVD raw material easily forming a film on a spatial structure. 

Chemical vapor deposition method using an organoplatinum compound

An object of the present invention is to provide an organoruthenium compound which has good film formation characteristics as an organoruthenium compound for chemical deposition, has a high vapor pressure, and can easily form a film even when hydrogen is used as a reactant gas. The present invention relates to an organoruthenium compound, dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium (II) which can have isomers 1 to 3, wherein the content of the isomer 2 is 30% by mass or more, the content of the isomer 3 is 30% by mass or less, and the balance is the isomer 1.

Growing community of inventors

Tsukuba, Japan

Shunichi Nabeya