Panasonic Holdings Corporation

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Shunichi Matsuno

Junichi Takino

Masashi Yoshimura

Yusuke Mori

Masayuki Imanishi

Masayuki Hoteida

Shigeyoshi Usami

Toshiyuki Kojima

Akihiro Horikawa

Motohiro Okochi

A powder application apparatus includes a transport device, a powder supplier, a squeegee, and an ultra-high frequency vibration generator. The transport device is configured to move a sheet in a predetermined direction. The powder supplier is configured to supply powder on a surface of the sheet. The squeegee is positioned at a distance from the sheet, and the powder supplier is configured to adjust a thickness of the powder supplied onto the surface of the sheet. The ultra-high frequency vibration generator is configured to vibrate the squeegee at a frequency of 2 kHz or more and 300 kHz or less.

Powder application apparatus

A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by 'θ', wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first carrier gas into the nurturing chamber is denoted by “L”, wherein a distance between the forward end of the first carrier gas supply inlet and the forward end of the group-III element oxide gas supply inlet is denoted by “M”, wherein a diameter of the seed substrate is denoted by “k”, and wherein following Eqs. (1) to (4), 0°<θ<90° (1), 0.21≤S/k≤0.35 (2), 1.17≤(L+M)/k≤1.55 (3), k=2*(L+M)/tan θ+S (4) are satisfied.

Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate

A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y<[1−k*H(Ts)]/[k*H(Ts)−j*H(Tg)]*j*H(Tg)*t (I), y≥1.58*10*(22.4/28)S*F(N)/F(T) (II), wherein k represents an arrival rate to a saturated vapor pressure of a group-III element in the raw material chamber, Ts represents a temperature of the raw material chamber, Tg represents a temperature of the nurturing chamber, H(Ts) represents a saturated vapor pressure of the group-III element at the temperature Ts in the raw material chamber, H(Tg) represents a saturated vapor pressure of the group-III element at the temperature Tg in the nurturing chamber, j represents a corrective coefficient, t represents a sum of gas flow amounts flowing into the nurturing chamber from those other than the raw material chamber, S represents a cross-sectional area of the connecting pipe, F(N) represents a volumetric flow amount of the nitrogen element-containing gas supplied into the nurturing chamber, and F(T) represents a sum of volumetric flow amounts of gases supplied into the nurturing chamber from those other than the raw material chamber.

Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II)

An apparatus for producing a Group-III nitride semiconductor crystal includes a raw material reaction chamber, a raw material reactor which is provided in the raw material reaction chamber and configured to generate a Group-III element-containing gas, a board-holding member configured to hold a board in the raw material reaction chamber, a raw material nozzle configured to spray the Group-III element-containing gas toward the board, a nitrogen source nozzle configured to spray a nitrogen element-containing gas toward the board, in which, in a side view seen in a direction perpendicular to a vertical direction, a spray direction of the nitrogen source nozzle intersects with a spray direction of the raw material nozzle before the board, and a mixing part in which the Group-III element-containing gas and the nitrogen element-containing gas are mixed together is formed around the intersection as a center, a heater, and a rotation mechanism.

Apparatus for producing Group-III nitride semiconductor crystal including nitrogen source nozzles with different spray directions

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Kyoto, Japan

Shunichi Matsuno