Sh Materials Co., Ltd.

Shunichi Kidoguchi

Kaoru Hishiki

Hiroki Nakayama

Methods for producing a substrate for semiconductor element mounts are provided. A base substrate can be prepared having on a first metal layer, a second metal layer through which a metal layer for instrumentation is hardly diffusible. A patterned resist mask layer on the second metal layer can be formed. A surface of the second metal layer under reprocessing treatment can form a reprocessed surface which can be provided with an organic film that controls adhesion between the metal layer for instrumentation and the reprocessed surface by a liquid agent containing a component that shows the nature of amphoteric surfactant. The metal layer for instrumentation can be formed on the reprocessed surface via the organic film. A semiconductor element mount portion and an electrode terminal portion can be electroformed on the metal layer for instrumentation. The resist mask from the second metal layer of the base substrate may be removed.

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Isa, Japan

Shunichi Kidoguchi