Tokyo Electron Limited

Shunichi Iimuro

Shin Okamoto

A method and system for multi-zone control of temperature for a substrate is described. The temperature control system comprises a heat exchanger coupled to two or more fluid channels in a substrate holder configured to support the substrate. The heat exchanger is configured to adjust the temperature of a heat transfer fluid flowing through the two or more fluid channels. The temperature control system further comprises a heat transfer unit having an inlet that is configured to receive heat transfer fluid from the heat exchanger at a bulk fluid temperature. Additionally, the heat transfer unit comprises a first outlet configured to couple a portion of the heat transfer fluid at a first temperature less than the bulk temperature to a first fluid channel of the two or more fluid channels, and a second outlet configured to couple a remaining portion of the heat transfer fluid at a second temperature greater than the bulk fluid temperature to a second fluid channel of the two or more fluid channels.

Multi-zone substrate temperature control system and method of operating

Contact holes ( ) are formed by means of plasma etching, such that the contact holes are formed from the top surface of a silicon oxide insulating film ( ) down to a wiring layer ( ) at a deep position and a wiring layer ( ) at a shallow position, respectively, which are embedded in the insulating film ( ). A process gas containing C F , CO, and Ar is used, while the process pressure is set to be from 30 to 60 mTorr, and the partial pressure of the C F gas is set to be from 0.07 to 0.35 mTorr. Under these conditions, the process gas is turned into plasma, and the insulating film ( ) is etched with the plasma to form the contact holes ( ).

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Burlington, MA, United States of America

Shunichi Iimuro