Shin-etsu Chemical Co., Ltd.

Naoetsu Electronics Co., Ltd.

Shunichi Igarashi

Takeshi Akatsuka

Tsutomu Onishi

The present invention can finely arrange p-type diffusion layers and n-type diffusion layers. A p-type diffusion layerand an n-type diffusion layerare simultaneously formed on a back surfaceof a semiconductor substratein a state that the p-type diffusion layerand the n-type diffusion layerare arranged close to each other, and a back surfaceside of the semiconductor substrateon which outer end portions of the p-type diffusion layersand the n-type diffusion layersare brought into contact with each other is removed thus separating the p-type diffusion layerand the n-type diffusion layerfrom each other and hence, the p-type diffusion layerand the n-type diffusion layercan be separately arranged in a state that the p-type diffusion layerand the n-type diffusion layerare arranged close to each other.

Growing community of inventors

Niigata, Japan

Shunichi Igarashi