Tokyo Electron Limited

Shunichi Endo

Tadashi Hirata

Takashi Akahori

Takeshi Aoki

Shuichi Ishizuka

Yoko Naito

Masahide Saito

Osamu Yokoyama

Risa Nakase

Masaki Tozawa

It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice. A conductive film, e.g., a TiN film , is formed on a CF film . After a pattern of a resist film is formed thereon, the TiN film is etched with, e.g., BCl gas. Thereafter, when the surface of the wafer is irradiated with O plasma, the CF film is chemically etched, and the resist film is also etched. However, since the TiN film functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film , the TiN film functions as an adhesion layer for adhering the interconnection layer to the CF film and serves as a part of the interconnection layer. As the mask, an insulator film of SiO or the like may be substituted for the film.

Process for the production of semiconductor device

This invention is a method of: making a film-forming gas including a compound gas of carbon and fluorine into plasma in a vacuum container including a stage for an object to be processed and applying a bias electric power to the stage in order to draw ions in the plasma toward the object while forming an insulation film consisting of a film of fluorine-added carbon onto the object by the plasma. At first, a first electric power of the bias electric power is applied to the stage and the compound gas of carbon and fluorine is introduced at a first flow rate to form the film of fluorine-added carbon onto the object Then, a second electric power of the bias electric power smaller than the first electric power is applied to the stage and the compound gas of carbon and fluorine is introduced at a second flow rate smaller than the first flow rate to form the film of fluorine-added carbon onto the object According to the invention, in the case of filling up a concave portion having a high aspect ratio with a film of fluorine-added carbon, the film-forming process can be conducted while generating less voids with a raised throughput.

Plasma film forming method utilizing varying bias electric power

In a semiconductor device, a contact layer is provided between a silicon-containing insulating film SiO , etc. or a metal wiring layer, and a fluorine-containing carbon CF film to increase their adhesion. For this purpose, SiC film deposition gases, such as SiH gas and C H gas, are excited into plasma to stack a SiC film &lsqb; &rsqb; as the contact layer on the top surface of a SiO film &lsqb; &rsqb;. After that, switching of deposition gases is conducted for about 1 second by introducing SiH gas, C H gas, C F gas and C H gas. Subsequently, CF film deposition gases, such as C F gas and C H gas, for example, are excited into plasma to deposit&lsqb;e&rsqb; a CF film &lsqb; &rsqb; on the SiC film &lsqb; &rsqb;. In this way, both the SiC film deposition gases and the CF film deposition gases exist simultaneously during the deposition gas switching step, whereby Si&mdash;C bonds are produced near the boundary between the SiC film &lsqb; &rsqb; and the CF film &lsqb; &rsqb; across these films, and they enhance adhesion between these films and hence increase adhesion of the SiO film &lsqb; &rsqb; and the CF film &lsqb;

Semiconductor device having a fluorine-added carbon film as an inter-layer insulating film

Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

Plasma film forming method and plasma film forming apparatus

For example, in a plasma processing system, C,F,gas and C,H,gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350&deg; C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film,having an F content of, for example, 22% on silicon substrate,This CF film,has a relative dielectric constant of 2.4.

Growing community of inventors

Sagamihara, Japan

Shunichi Endo